国家/地区 中国（8）
IPC部 H（8）
IPC大类 H01（8）
IPC小类 H01L（7）
IPC H01L043/06（3） H01L043/14（3） H01L027/22（2）
H01L043/10（2） H01L051/05（2） H01L051/40（2）
发明人 PENG L（8）
公开年 2013（2） 2021（2）
申请年 2012（3） 
专利权人 UNIV PEKING（8）

Feedback type two-end fuse storage unit for use in e.g. field of high reliability aerospace, has substrate provided with graphene channel, and drain electrode and source electrode provided with gate window, where end of drain electrode is connected with metal gate of gate window.

PENG L, QIU C, LI X

Long channel narrowband gap semiconductor transistor use in an electronic industry, has gate dielectric layer and gate between two sides of gate structure having source electrode and drain electrode, and narrow band gaps semiconductor channels provided on narrowband channel layer.

PENG L, ZHANG Z, XU L

Self-aligned patterning method for source and drain contact metals of undoped thin film transistors, involves using photoresist as mask, and opening window to define total pattern size of source and drain regions and gate.

QIU C, MENG L, LIANG S, ZHANG Z, PENG L

Lithium ion battery electrode comprises two-dimensional organic perovskite material or quasi-two-dimensional organic perovskite material, conductive agent is conductive graphite, carbon black, carbon fiber, carbon nanotube, graphene.

SUN W, KONG H, ZHOU H, PENG L

Graphene Allylprodine Hall element integrated circuit, has circuit chip whose core circuit region is provided with multiple metal interconnection electrodes, and metal pressure welding area electrode covered with passivation layer.

PENG L, WANG S, ZHANG Z, XU H

Integrated circuit graphite allylprodine Hall element packaging structure, has organic thin film layer formed on upper surface of graphene channel and provided with inorganic thin film layer.

PENG L, SHI R, XU H, WANG S, ZHANG Z

Method for preparing graphene involves growing graphene on insulating substrate or metal, and carrying out optical photo-etching on insulating substrate.

PENG L, WANG S, XU H, ZHANG Z, SHI R

Hall integrated circuit, has amplifier provided with hall element and FET, where hall element is provided with two exciting electrodes, two hall electrodes and graphene channel, and hall electrodes are connected with two sides of channel.

PENG L, WANG S, XU H, ZHANG Z