国家/地区 美国（7） 韩国（6） 日本（2）
IPC部 H（7） B（3）
IPC大类 H01（7） B82（2）
IPC小类 H01L（7） B82Y（2）
IPC H01L029/78（6） H01L021/336（5） H01L029/786（5）
H01L029/06（3） H01L029/16（3） H01L029/66（3）
B82Y099/00（2） H01L029/08（2） H01L029/423（2）
H01L029/778（2） H01L051/05（2） H01L051/30（2）
发明人 SEO D（7）
公开年 2013（7）
申请年 2012（3）  2013（3） 
专利权人 SAMSUNG ELEC.（7）

Graphene switching device comprises first electrode and insulating layer in semiconductor substrate forming energy barrier between graphene layer and electrode, metal particles, second electrode, gate insulating layer and gate electrode.

SEO D, KIM S, PARK S, YUN Y, LEE Y Y, LEE C, DAVID S, KIM S W, PARK S J, YUN Y J, LEE Y H

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Method of fabricating graphene electronic device, involves forming graphene layer on insulating layer and connecting graphene layer having two end to electrodes respectively.

CHUNG H, BAEK S, SEO S, WOO Y, HEO J, SEO D

Three-dimensional zero gap semiconductor graphene switching device, has graphene layer surrounding end portion of semiconductor layer, and gate insulation layer surrounding graphene layer, where gate surrounds insulation layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, YANG H, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, YANG H J, CHUNG H J

Manufacturing graphene electronic device involves making metal compound layer and catalyst layer on substrate, growing graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

LEE C S, KIM S W, PARK S J, SEO D, YUN Y J, LEE Y H, LEE C, PARK S, YUN Y

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Method for transferring graphene, involves forming trench on substrate, arranging graphene layer using additive liquid on substrate, pressurizing graphene layer on substrate, and removing additive liquid from substrate by drying.

SEOK S H, SEONG H J, JONG J H, JUN Y H, JUN P S, JAE S H, SEO D, HEO J, CHUNG H, YANG H, PARK S, SONG H, HEO J S, CHUNG H J, YANG H J, PARK S J, SONG H J