国家/地区 中国（14）
IPC部 H（8） C（4） B（3）
IPC大类 H01（8） B01（3） C01（3）
IPC小类 H01M（4） B01J（3） C01B（3）
H01L（3）
IPC B01J027/24（3） H01M004/90（3） C01B031/04（2）
H01L021/336（2）
发明人 SHI J（14）
公开年 2013（11） 2014（3）
申请年 2013（14）
专利权人 INST MICROEL.（5） UNIV DONGHUA（2） UNIV NORTHWE.（2） UNIV ZHENGZH.（2）

Nitrogen-doped graphene catalyst for preparing membrane electrode, comprises calcined nitrogen-doped graphene precursor comprising graphite oxide, small organic molecules containing nitrogen, and non-noble metal salts and/or hydrates.

QIAO J, SHI J, ZHOU X, QING X, CHEN S, LI Y, TANG S, ZHONG X, ZHANG E, WU M, JIAN S, XU N

Preparation of nitrogen-doped graphene catalyst comprises dispersing graphite oxide in solvent, ultrasonically processing, adding at least one nitrogen-containing organic micromolecule, hydrate of metal salt, and dispersing in solvent.

QIAO J, SHI J, XU P, ZHOU X, CHEN S, LEI T, LI Y, WU M, JIAN S, XU N, TANG Q

Nucleic acid adaptive body photo-electrochemical mercury ion detecting method, involves obtaining tetra-carboxylic acid-graphene oxide hetero-junction of photo-electrochemical sensor by copper-sensitized photoelectric chemical sensor.

LI H, SHI J, WANG W, XUE Y

Preparation of high-performance magnetic conductive pressure-sensitive adhesive used for nickel chemical plating, by mixing graphene and deionized water, subjecting to ultrasonic dispersion, and adding palladium chloride.

SHI J, HUANG Y, ZHANG F, ZHANG Y, QI S, MA H

Preparation of non-metallic heteroatom-doped graphene oxide used as reduction catalyst, by formulating graphene oxide solution, adding non-metallic reducing agent, stirring, maintaining temperature, centrifuging, washing and drying.

ZHU Y, CHEN L, CUI X, SHI J, WANG Y

Making graphene conductive film involves depositing copper on graphite surface, growing graphene on copper surface followed by adhering heat release adhesive tape on graphite surface, and subjecting to electrochemical etching method.

JIN Z, MA P, ZHANG D, SHI J

Graphene oxide top gate FET device parasitic resistance reducing method, involves covering gate-source, forming metal lead contact, and adjusting distance between gate-source and gate drain to reduce channel access resistance.

CHEN J, JIN Z, MA P, PENG S, ZHANG D, SHI J

Graphene conductive film preparation method, involves growing graphene on metal foil surface, and conducting reduction treatment of deposition of metal foil graphene oxide under high temperature condition of protective gas.

JIN Z, MA P, ZHANG D, SHI J

Graphene field effect transistor, has insulating layer formed on semiconductor substrate, and gate electrode located on gate dielectric layer, which is provided with graphene oxide medium layer and metal oxide dielectric layer.

JIN Z, ZHANG D, CHEN J, MA P, PENG S, SHI J

Method of modifying surface of carbon fiber grafted graphene oxide involves processing carbon fiber material in plasma atmosphere, processing and then vacuum-drying, adding graphene oxide in acetone and sonicating.

WANG J, JIANG J, FANG L, SHI J, DEND C