国家/地区 美国（11） 韩国（10）
IPC部 H（11） B（10） C（7）
IPC大类 B82（10） H01（9） B32（7）
C01（7） B01（2） B05（2）
C23（2） H05（2）
IPC小类 B82Y（10） H01L（9） B32B（7）
C01B（7） H01B（5） B01J（2）
B05D（2） C23C（2） H05B（2）
IPC B82Y030/00（8） B82Y040/00（6） C01B031/02（5）
H01B001/04（5） B32B009/00（3） B82Y099/00（3）
C01B031/04（3） H01L029/78（3） B32B009/04（2）
B32B018/00（2） C23C016/26（2） H01B005/14（2）
H01L021/02（2） H01L021/20（2） H01L029/06（2）
发明人 SHIN H（12）
公开年 2012（12）
申请年 2011（6）  2012（6） 
专利权人 SAMSUNG ELEC.（11） CHOI J（2） SHIN H（2） SNU R DB FOU.（2）
UNIV SEOUL N.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） YOON S（2）

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Graphene-on-substrate, useful as transparent electrode of e.g. transistor, comprises substrate, first intermediate layer disposed on substrate, graphene disposed on first layer, and second intermediate layer disposed on graphene.

WOO Y, CHOI J, SHIN H, YOON S, WOO Y S, CHOI J Y, SHIN H J, YOON S M

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J

Counter electrode for dye-sensitized solar cell in e.g. building integrated solar cell generating system, has oxidation graphene and metal hybrid film successively laminated on metal layer.

SHIN H, JUN Y, SHIN H S, JUN Y S, SEOK S H, SEOK J Y

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Preparing a graphene shell, comprises forming graphitizing catalyst in three-dimensional form, forming a coating on the graphitizing catalyst, and heat-treating the coating on the graphitizing catalyst in an inert or reductive atmosphere.

CHOI J, SHIN H, YOON S

Transparent electrode, used in e.g. display device and solar cell, comprises graphene on one surface of transparent substrate, where graphene is doped with positive-dopant having specific molecular weight and transmittance variation rate.

YOON S, CHOI W, SHIN H, CHOI J, YOON S M, CHOI W M, SHIN H J, CHOI J Y