国家/地区 中国（12） 韩国（9） 美国（9） 欧洲专利局（EPO）（2）
IPC部 H（11） C（8） B（6）
G（2）
IPC大类 H01（11） B82（5） C01（4）
C08（3）
IPC小类 H01L（10） B82Y（5） C01B（4）
C08K（3） C08L（3）
IPC H01L029/16（6） H01L029/06（5） H01L029/78（5）
C01B031/04（4） H01L021/336（4） H01L029/786（4）
C08K003/04（3） H01L029/08（3） H01L029/10（3）
H01L029/66（3） B82Y010/00（2） B82Y030/00（2）
C08K009/04（2） H01L029/423（2） H01L029/739（2）
发明人 SONG H（19）
公开年 2014（11） 2013（6） 2015（2）
申请年 2013（19）
专利权人 SAMSUNG ELEC.（8） UNIV NANJING.（5） BYUN K（3） CHUNG H（3）
HEO J（3） PARK S（3） SEO D（3） SONG H（3）
LEE J（2） SNU R DB FO.（2） UNIV BEIJING.（2） UNIV SEOUL N.（2）

Porous graphene nanosheet used in lithium ion battery cathode material, prepared using e.g. metal source and carbon source.

CHEN X, SONG H, SONG R

Donor substrate for laser transfer, has intermediate layer arranged on light-to-heat conversion layer, where light-to-heat conversion layer comprises graphene.

KWON J, YOON J, PYO S, SONG H, YOO B, LEE B, YE J, KIM Y, KWON J Y, YOON J H, PYO S W, SONG H J, YOO B W, LEE B S, YE J M, KIM Y S

Graphene oxide/organic aerogel composite material comprises nano-graphene oxide, and organic aerogel.

CHEN X, GUO K, HU Z, SONG H

Graphene memory has Schottky barrier that is formed between conductive semiconductor substrate and graphene layer such that graphene layer is used as charge-trap layer for storing charges.

LEE J, CHUNG H, PARK S, BYUN K, SEO D, SONG H, HEO J, LEE J H, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S, HUH J, JUNG H, SONG C, SAIL D

Electronic device e.g. field effect transistor (FET) has graphene that directly contacts area of semiconductor layer, and metal layer on graphene.

BYUN K, PARK S, SEO D, SONG H, LEE J, CHUNG H, HEO J, BYUN K E, PARK S J, SONG H J, LEE J H, CHUNG H J, HEO J S

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Graphene switching device for use as diode has gate electrode which is provided on gate insulation layer arranged on graphene layer set on insulation layer.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S

Polymer nanocomposite material comprises filler including graphene oxide-cyclodextrin.

LI C, LIU B, ZHANG S, CHEN W, SONG H, YAO D, YU R, ZHOU J

Memory device having FET structure, comprises graphene switching device having source, drain and gate electrodes and including Schottky barrier between drain electrode and channel in direction from source electrode toward drain electrode.

SEO D, KIM H, CHUNG H, PARK S, BYUN K, SONG H, HEO J, KIM H J, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H