国家/地区 台湾（15）
IPC部 C（10） H（9） B（2）
IPC大类 H01（8） C01（7） C23（3）
B01（2） C08（2）
IPC小类 C01B（7） H01L（5） C23C（3）
H01M（3） B01J（2） C08K（2）
C08L（2）
IPC C01B031/04（4） B01J019/08（2） C08K003/04（2）
H01L029/66（2） H01L029/78（2） H01M004/04（2）
H01M004/36（2）
发明人 WANG C（15）
公开年 2011（2） 2013（2） 2015（2） 2017（2） 2021（2） 2022（2）
申请年 2013（4）  2010（2）  2015（2）  2017（2）  2021（2） 
专利权人 UNIV NAT TSI.（3） METAL IND RE.（2） TAIWAN SEMIC.（2）

Nanogel for preventing or treating disease or condition susceptible to amelioration by anticoagulant or antioxidant for e.g. thrombophilia, vascular thrombosis, comprises graphene-like nanosheet and polysaccharide.

LIN H, HUANG C, MAO J, WANG C, HUANG Z

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Semiconductor device e.g. integrated circuit has layer of deposited capacitor material (DCM) which is set over channel region, dielectric layer that is set over DCM layer, and metallic gate electrode layer which is set over dielectric layer.

HUANG W, TSAI C, CHENG K, WANG C, CAI Q, CHENG G, WANG Z, WANGCHUN H, WANG C H, CHENG K L, TSAI C W, HUANG W C

Integrated circuit comprises semiconductor substrate, source region with doped semiconductor material, drain region with doped semiconductor material, gate formed between source region and drain region and nanosheet with specific regions.

LIN Y, CHIU Y, CHANG S, TSAI C, HUANG Y, CHENG K, WANG C, QIU Y, ZHANG S, CAI Q, CHENG G, WANG Z

Electro-less nickel graphene composite layer and method of manufacturing the same.

WANG C

Manufacturing method of graphene quantum dots involves heating raw material by heating temperature.

CHANG S, LIN Y, WANG C, CHANG S C, LIN Y F, WANG C Y

Method of manufacturing EUV photomask inorganic protection film component respectively deposits a silicon nitride layer on two surfaces of a graphene layer.

WANG C

Manufacturing negative plate of secondary battery, involves providing multiple sheets of functional graphene, and compressing functional graphene to faun graphene target.

HUANG C, CHIU S, CHU C, CHUANG Y, WANG C, WEI C, HUANG J, QIU S, ZHU J, ZHUANG Y, WANG Z, WEI J, WANG J

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Lithium ion secondary battery electrode material wherein the multilayer graphene is adhered on the electrode material powder.

WENG B, LIN C, KO P, BOR H, WANG C, KUO J, HWANG J