国家/地区 中国（21）
IPC部 C（14） H（7） B（5）
A（2）
IPC大类 C01（8） H01（7） C08（4）
B82（3） C23（3） C09（2）
IPC小类 C01B（8） C08K（4） C08L（4）
B82Y（3） C08J（3） C23C（3）
H01G（3） H01L（2）
IPC C01B031/04（7） C08K003/04（4） B82Y030/00（3）
B82Y040/00（2） C08K009/04（2） C08L077/06（2）
发明人 WANG G（21）
公开年 2013（13） 2014（6） 2015（2）
申请年 2013（21）
专利权人 SHANGHAI INS.（4） CHINESE ACAD.（3） UNIV JILIN（2） UNIV TONGJI（2）

Preparing graphene nano-belt carbon fiber, comprises e.g. coating surface of metal-plated single-walled carbon nano-tubes, etching, and drawing filaments of carbon nano-tubes, molding, and post-processing.

SUN L, WANG G, YU F

Use of germanium based graphene for producing antimicrobial effect by inhibiting Gram-positive bacteria e.g. Staphylococcus aureus, and Gram-negative bacteria e.g. Escherichia coli, providing anti-fatigue effect and inhibiting tumor.

DI Z, CHEN D, DING G, GUO Q, LI J, LIU X, WANG G, XIE X, ZHANG M, ZHENG X

Catalyst preparation for oxygen reduction reaction of non-noble metal involves adding ferric ammonium citrate solid powder in graphene oxide solution, removing solvent, and placing obtained solid powder in quartz boat for heating.

BAO X, TAN D, WANG G, WANG J

Composite graphene nano-hydrogel drug carrier has cylindrical type multi-carrier units that are connected with upper and lower round end surface, circular cross section diameter is set to specific value.

CHEN P, HU X, WANG X, ZHANG X, WANG G, DUO Y

Growth graphene substrate etching method, involves removing impurities and pollutant from grapheme substrate by graphite dilute, and repeatedly washing graphene substrate until graphene substrate is completely etched.

YANG J, LI H, QIU Y, WANG G, WANG W

Preparation of boron-doped graphene involves using boron-doped silicon carbide prepared by thermal decomposition method at high temperature.

CHEN L, CHEN X, GUO L, GUO Y, JIA Y, LI Z, LU W, WANG G, WANG W

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Gallium nitride growing method for graphene thin film, involves continuously filling protective gas to chemical vapor deposition (CVD) reaction chamber, and taking out substrate with grown graphene thin film in room temperature.

YI X, LI J, WEI T, ZHAO Y, DUAN R, SUN L, WANG G

Preparing porous graphene, comprises e.g. adding mixed solution of water or ethanol, magnetically stirring, ultrasonically dispersing, stirring by adding chemical foaming agent, filtering, drying, extruding, heating, and activating.

LI X, YANG Z, SHEN J, WANG G

Preparation of graphene oxide-loaded copper oxide electrode material for lithium ion capacitor, involves adding sodium and copper nitrates into deionized water, dropping mixture in aqueous ammonia, and adding mixture in graphene oxide.

YANG F, CAO D, LIU X, LI Y, YANG S, PAN Y, WANG G