国家/地区 中国（12）
IPC部 C（5） G（4） A（2）
H（2）
IPC大类 G01（4） C08（3） A61（2）
C01（2） H01（2）
IPC小类 G01N（4） A61K（2） A61L（2）
C01B（2） C08K（2） C08L（2）
IPC G01N033/574（4） A61K047/04（2） A61K047/36（2）
A61L024/00（2） A61L024/02（2） A61L024/08（2）
C08K003/04（2）
发明人 WANG L（12）
公开年 2019（12）
申请年 2018（12）
专利权人 UNIV TIANJIN（4） UNIV SHENZHE.（2）

Preparing 3-dimensional shell structure composite material based on graphene oxide and chitosan for preparing hemostatic materials and drug release, by freeze-drying graphene oxide aqueous solution and adding graphene oxide to adsorb shell.

SHEN Y, WANG Z, WANG L, YANG Y, ZHANG M

Preparation of graphene oxide and chitosan-based porous composite material used for preparing hemostatic material by mixing graphene oxide aqueous solution with chitosan aqueous solution containing glacial acetic acid, and pre-freezing.

SHEN Y, WANG Z, WANG L, YANG Y, ZHANG M

Preparing graphene, involves dispersing carbon source in phosphoric acid aqueous solution, heating, performing solid-liquid separation and drying, where carbon source comprises mixture of graphene oxide and/or graphite oxide.

WANG L, FEI W, LIU Z, LI J

Method for preparing copper-indium-gallium-selenium solar cell assembly, involves utilizing composite thin film that carries graphene to encapsulate molybdenum layer coating and copper indium gallium selenium thin film.

ZHAO S, YANG L, YE Y, WANG L

Full covalent bond connecting full reduction-oxidation graphene field effect transistor comprises substrate, RGO layer, semi-RGO layer and GO layer, where RGO layer is more pairs, where each pair is 2 RGO layer and as full covalent bond.

CHENG S, ZHANG C, HU W, WANG L, WANG Y, LU X, SI K

Use of fully-covalently-bonded fully-reduced graphene oxide field-effect transistor in production of biosensor which involves connecting full covalent bond to fully-reduced graphene oxide field effect transistor with source electrode.

CHENG S, ZHANG C, CHEN P, HU W, WANG L, WANG Y, LU X, SI K

Completely and covalently linked whole reduced graphene oxide field effect transistor comprises silicon dioxide layer loaded on silicon wafer, and reduced graphene oxide (RGO) layers connected as source electrode and drain electrode.

CHENG S, ZHANG C, HU W, WANG L, WANG Y, LU X, SI K

Use of fully covalently bonded fully reduced graphene oxide field effect transistor for constructing biosensor.

CHENG S, ZHANG C, HU W, WANG L, WANG Y, LU X, SI K

Electrolysis device for preparing graphene, has cooling liquid that is provided for cooling side wall of each electrolytic groove, and multiple cooling liquid that are in fluid communication.

WANG L, YU S

Modified silicone resin for metal anticorrosive coating, silane-grafted graphene oxide in a preset amount of silicone resin obtained by modifying the silicone resin by using silane-grafted graphene oxide as a reinforcing agent.

PU J, TIAN S, XIE B, LIU Z, WANG L