国家/地区 中国（7）
IPC部 H（6）
IPC大类 H01（6）
IPC小类 H01L（5）
IPC H01L021/336（2） H01L031/0352（2） H01L031/108（2）
发明人 WEI C（7）
公开年 2014（7）
申请年 2014（6） 
专利权人 CHINA ELECTR.（6） 13TH RES INS.（4）

Manufacture of graphene oxide-aerogel modified three-dimensional electrode brush for anode material, involves ultrasonic processing of graphene oxide dispersion, aging, freezing using liquid nitrogen and scraping excess aerogel.

FENG C, LI C, LV Z, WEI C, ZENG X, YANG X

Ultra-low resistance ohmic contact graphene transistor, comprises channel region formed between substrate, source and drain, where channel region has graphene layer, dielectric layer and gate electrode from bottom.

WEI C, LI J, LIU Q, FENG Z, HE Z

Graphene-semiconductor-graphene (GSG) type gallium nitride based UV detector has third and sixth graphene layers that are staggered, such that first and fourth layers are set with first and second ohmic contact electrode down-leads.

FENG Z, WANG J, WEI C, XING D, ZHANG L, YANG D, LV Y, LIANG S

GaN base plasma excimer detector, has AlGaN layer arranged on right side of drain-end ohm contact metal layer, and graphene arranged on ohm contact electrode, where graphene layer and AlGaN layer are arranged with each other.

FENG Z, WANG J, WEI C, XING D, ZHANG L, YANG D, LIANG S

Diamond device preparing method, involves removing photoresist cover from diamond electric conduction channel, forming position of drain with photoresist, covering graphene on diamond surface, and depositing ohmic contact metal on graphene.

FENG Z, LI J, LIU Q, WANG J, WEI C, HE Z

Self-alignment based graphene transistor manufacturing method, involves forming first metal layer on substrate, arranging second metal layer on graphene, and connecting self-alignment unit with third metal layer.

FENG Z, LI J, LIU Q, WEI C

Manufacture of nickel metal film-coated N-type doped silicon nitride growth controllable graphene material involves growing nickel metal film on composite substrate obtained from silicon nitride, and chemical vapor depositing.

FENG Z, LI J, LIU Q, WEI C, HE Z