国家/地区 中国（17） 台湾（3） 美国（2）
IPC部 C（9） H（7） A（2）
B（2）
IPC大类 H01（7） C01（4） A61（2）
C09（2） C23（2）
IPC小类 C01B（4） H01L（4） A61K（2）
A61P（2） C09K（2） C23C（2）
H01M（2）
IPC C01B031/04（4） A61K041/00（2） A61K049/04（2）
A61P035/00（2） C09K003/00（2） H01L021/336（2）
H01L029/10（2） H01M004/58（2）
发明人 WU H（19）
公开年 2013（9） 2014（7） 2015（3）
申请年 2013（19）
专利权人 UNIV NORTHWE.（2） UNIV SHANGHA.（2） UNIV TSINGHU.（2）

Preparation of organic solvent-dispersed graphene material comprises treating by reducing graphene oxide, dispersing reduced graphene oxide, and reacting with alkylating agent.

CHEN Q, LIU C, LI W, WANG W, WU H, ZHAO F, ZHAO G, ZHAO S

Graphene magnetic chitosan polymer as a nano probe of detecting pathogenic bacterium.

WU H, ABDELHAMID H N, WU H F

Manufacture of oxide semiconductor composition used in manufacture of oxide thin-film transistor, involves mixing graphene, metal oxide precursor, and solvent, and preparing metal oxide solution, in which graphene remains dispersed.

LIANG J J, LIAN J T, WU H Y, FU H M, RYO K, HSIEH C, LIAN J, WU H, FU H, LIANG J, HSIEH C S

Making semiconductor device used in e.g. cell phone, by forming graphene-based conductive layer over surface of conductive feature within opening in insulating material, and forming carbon-based adhesive layer over sidewalls of opening.

YANG S, LEE M H, LEE H, WU H, LI M, LI X, WU X, LEE M, YANG S Y, LEE H H, WU H C

Auxiliary surfactant graphene three-dimensional network modified lithium iron phosphate anode material for lithium ion battery, comprises three-dimensional network and graphite alkene covered with lithium iron phosphate material.

DAI Z, GUO S, HE S, WANG C, WU H

Preparation of composite nanomaterial, e.g. for computed tomography contrast agent, by dispersing nano graphene oxide in alcohol, adding bismuth source and selenium source, adding polyvinylpyrrolidone, and performing solvothermal reaction.

YANG Y, YANG S, ZENG B, WU H

Friction resistance platinum/graphene composite structure for MEMS device, has substrate composed of graphene and metal molybdenum of micro-structure array.

CHEN Y, GU Z, WU H, ZHANG S

Storage unit, has substrate and self-assembled monolayer, where self-assembled monolayer is arranged on substrate and graphene thin film is arranged on upper side of self-assembled monolayer.

HUANG L, QIAN H, WU H, LV H

Graphene FET, has drain electrode contact layer placed on substrate, and source contact layer and bottom drain contact, which are located at left and right sides of grid metal layer.

QIAN H, WU H, LV H

Graphene nickel-phosphorus plating solution comprises graphene, nickel sulfate , sodium hypophosphite, sodium acetate, citric acid, lactic acid, propionic acid, composite stabilizer, and balance distilled water.

WANG A, ZHU X, YU P, ZHU J, GAO F, HAN S, SUN J, WU H, MIAO S