国家/地区 中国（16） 世界知识产权组织（3）
IPC部 C（10） H（5）
IPC大类 C01（8） H01（5） C23（4）
C30（3）
IPC小类 C01B（8） H01L（5） C23C（4）
C30B（3）
IPC C01B031/04（7） C23C016/26（4） H01L021/28（3）
H01L021/283（2）
发明人 XIE X（16）
公开年 2012（8） 2013（8）
申请年 2012（16）
专利权人 CHINESE ACAD.（13） SHANGHAI INS.（10） CHINESE ACAD.（3）

Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.

CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M

Preparation of graphene nanopore array involves coating carbon solution on surface of porous anodic aluminum oxide template, pressing porous anodic aluminum oxide template on substrate surface, peeling template, and annealing metal base.

DING G, JIANG M, XIE X

Graphene preparation involves adding halobenzene in organic solvent in presence of catalyst to form graphene suspension, filtering suspension to obtain graphene oxide and catalyst, adding graphene oxide with acid, and filtering.

DING G, JIANG M, LI X, SUN J, WU T, XIE X

Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.

KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X

Method for manufacturing graphene alkenyl electronic field-effect device e.g. complementary metal oxide semiconductor (CMOS) device, involves exposing out portion of gate electrode to form source and drain electrodes.

CHEN Z, LIU X, WANG H, XIE H, XIE X, YU G, ZHANG Y

Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y

Manufacture of gate dielectric thin film on graphene surface involves introducing graphene into molecular beam epitaxy chamber kept at preset temperature and pressure, and passing metal vapor stream and oxidant gas stream.

SHEN D, WANG H, XIE X, YANG X, ZHANG Y

Method for preparing high-k gate medium on surface of multi-layer graphene, involves depositing metal oxide thin film on graphene surface by using atom layer depositing method and adopting metal oxide thin film as high-k gate medium layer.

WANG H, XIE X, YANG X, ZHANG Y

Preparation of graphene oxide/sulfide composite electrode material by dissolving graphite oxide with deionized water, ultrasonically peeling off, adding dimethylformamide, acid salt and water reducing agent, centrifuging, and drying.

DING G, DU F, JIANG M, XIE X

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y