国家/地区 中国（7）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L033/00（2） H01L033/40（2）
发明人 XU K（7）
公开年 2011（3） 2012（3）
申请年 2011（7）
专利权人 SUZHOU INST .（4） SUZHOU NANOW.（4） CHINESE ACAD.（3）

Anti-static foaming material comprises high melt strength polypropylene, graphene, foaming agent e.g. nitroso foaming agent, compatibilizer e.g. maleic anhydride graft-modified polypropylene and coupling agent e.g. vinylsilane.

GAO D, LV M, ZHANG S, CHEN L, XU K, YANG Q, GUO P, LV Y, XU M

LED, has semiconductor capping layer on surface of electrode and comprising graphite layer and metal layer, graphene-containing layer provided on metal layer, and ohmic contact provided between metal layer and graphene-containing layer.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

Microflow channel, has crystal support surface provided with atom stages, and graphene covering layer utilized for covering support surface, where atom stages of support surface and graphene covering layer form space.

GONG X, LIU Z, XU G, XU K, YANG H, ZHONG H

Conductive atomic force microscope probe, has cantilever probe substrate, needle tip and needle tip surface that are provided with conductive film, where conductive film is formed as graphene.

FAN Y, LIU Z, XU G, XU K, ZHONG H

Growing method of group III nitride substrate involves providing support substrate, forming graphene layer on surface of group III nitride semiconductor layer and forming group III nitride semiconductor layer on graphene layer.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

LED preparation method, involves forming continuous graphene cover layer on surface of nanometer column array layer, and forming metal electrode layer on surface of cover layer, where array layer is provided with semiconductor substrate.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

Growing method of graphene involves placing nitride substrate in center portion of plate heater, supplying non-oxidizing gas and carbon-containing substance, stopping supply of carbon source, and cooling grown product.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H