国家/地区 中国（10）
IPC部 C（8） H（2）
IPC大类 C01（2） C22（2） C23（2）
H01（2）
IPC小类 C01B（2） C22C（2） C23C（2）
IPC C01B032/194（2） C22C001/05（2） C22C001/10（2）
C22C032/00（2） C23C014/18（2） C23C014/30（2）
C23C014/35（2） C23C014/48（2） C23C014/58（2）
C23C016/26（2） C23C028/00（2）
发明人 XUE Z（10）
公开年 2018（8） 2020（2）
申请年 2018（10）
专利权人 SHANGHAI INS.（5） UNIV CHINESE.（3） CHINA PETROL.（2） SINOPEC RES .（2）

Aluminum-based composite material comprises aluminum alloy substrates, graphene and ceramic materials, and is prepared by mixing graphene powder with first solvent, and performing ultrasound to obtain first dispersion.

GU L, ZHU H, WEI L, MA L, HOU N, ZHU Y, XUE Z, ZHU M

Aluminum-based composite material comprises aluminum alloy substrates, graphene and ceramic materials, and mixing graphene powder with first solvent, and then performing ultrasound to obtain first dispersion.

WEI L, ZHU H, MA L, GU L, HOU N, ZHU Y, XUE Z, ZHU M

Method for preparing lithium metal phosphate in-situ composite graphene, involves mixing phosphoric acid solution with polyethylene glycol and adding lithium hydroxide solution, followed by stirring, centrifuging and lyophilizing.

LI W, CHEN Z, ZHOU W, WANG W, XUE Z, WANG N

Method for directly preparing graphene quantum dot array on insulating substrate, involves subjecting germanium quantum dot array in structure to oxidative volatilization treatment to remove germanium quantum dot array.

DI Z, ZHENG P, DONG L, XUE Z

Directly preparing graphene on insulating substrate comprises e.g. providing an insulating substrate, forming germanium layer and grapheme layer on upper surface of insulating substrate from bottom to top, and removing germanium layer.

DI Z, ZHENG P, DONG L, XUE Z

Method for preparing silicon-graphene based photodetector, involves providing silicon on insulator substrate and etching first openings and second openings spaced apart in top silicon, followed by forming fixed layer on surface of structure.

DI Z, MA Z, XUE Z, ZHANG M, MEI Y

Preparation of doped graphene involves providing substrate, forming protective layer on graphene layer, injecting doping element into graphene layer from upper surface of protective layer using ion implantation process and activating.

ZHANG M, GAO M, HAN X, JIA P, XUE Z, DI Z

Method for transferring graphene used in flexible electronic application, involves providing substrate, growing graphene on substrate, forming graphene/substrate structure, coating parylene on graphene and removing substrate.

ZHANG M, GAO M, HAN X, XUE Z, DI Z

Preparation of graphene-epoxy resin composite material involves mixing bisphenol A epoxy resin, epichlorohydrin and graphene, leaving mixture still, adding dicyandiamide curing agent and urea accelerator to lower layer solution and curing.

XUE Z

Preparation of nickel-based graphene composite material by adding surfactant to complex plating solution containing graphene oxide, introducing carbon dioxide gas, and carrying out phase commutation pulse electrodeposition.

LEI W, WANG J, XUE Z, LI X, ZHANG Y, HOU W