国家/地区 美国（29）
IPC部 H（28） B（14） C（4）
G（2）
IPC大类 H01（28） B82（11） C01（3）
B32（2）
IPC小类 H01L（24） B82Y（10） H01M（4）
C01B（3） H01B（3） B32B（2）
IPC H01L029/78（16） H01L021/336（9） H01L029/16（9）
H01L029/786（8） H01L029/06（7） H01L029/66（7）
B82Y099/00（6） H01L029/08（5） H01L029/10（5）
H01L029/778（5） B82Y040/00（4） H01L029/417（4）
H01L029/772（4） H01L051/30（4） H01M004/62（4）
发明人 YANG H（29）
公开年 2012（7） 2013（6） 2014（4） 2021（4） 2015（3） 2011（2）
申请年 2011（7）  2014（6）  2013（4）  2020（4）  2010（3）  2012（2） 
专利权人 SAMSUNG ELEC.（17） TORAY IND IN.（4） GLOBALFOUNDR.（3） UNIV SINGAPO.（3）
YANG H（3） SNU R DB FOU.（2） UNIV HANYANG.（2） UNIV HANYANG.（2）
UNIV SEOUL N.（2）

Ultrasonic electronic rhinitis therapeutic apparatus with far-infrared atomized coconut essential oil for treating chronic rhinitis, comprises nasal plug part comprising insertion column provided with coconut powder, disposed in nostril, and far-infrared generating tube provided in coconut powder.

WANG R, DU X, YANG H, YANG F

Semiconductor device e.g. NAND flash memory device, has gate layers stacked in vertical direction perpendicular to upper surface of substrate and spaced apart from each other on pattern layer, and memory vertical structure penetrating through gate layers in direction.

YANG H, KANG S

Vertical transistor device comprises a channel region comprising least one layer of two-dimensional (2D) material, bottom source/drain region, top source/drain region, and gate structure positioned all around one layer.

CIMINO S, STREHLOW E, PRABHU M, NAYYAR N, REN H, SUN K, PRITCHARD D, YANG H

Vertical transistor device comprises top source/drain region positioned vertically above portion of bottom source/drain region, and vertically oriented semiconductor structure positioned between bottom and top source/drain region.

CIMINO S, STREHLOW E, PRABHU M, NAYYAR N, REN H, SUN K, PRITCHARD D, YANG H

Planar transistor device in electronics industry, has layer of two-dimensional (2D) material whose planar top surface and planar bottom surface that are arranged parallel to planar surface of semiconductor substrate.

PRITCHARD D, YANG H, REN H, NAYYAR N, PRABHU M, STREHLOW E, CIMINO S

Graphene/organic solvent dispersion liquid used for manufacturing electrode, comprises graphene having preset difference between moisture content as measured by Karl Fisher method under specified conditions dispersed in organic solvent.

YANG H, TAMAKI E, KAWASAKI M, HIRAI Y, MIYAZONO K, YOSHIHIDE H

Graphene powder for manufacturing paste for forming lithium ion battery electrode, has preset specific surface area measured by BET measurement, and oxygen-to-carbon element ratio measured by X-ray photoelectron spectroscopy.

YANG H, TAMAKI E, KUBOTA Y

Multilayer graphene structure for use in graphene based magnetoresistance sensor of e.g. mobile phones, has graphene layers arranged on substrate, where charge mobility and carrier density of tuned layer are tunable by gate voltage.

KALON G, YANG H, SHIN Y J, CASTRO A H, SHEN R, CASTRO N A H, SHIN Y YU

Method for fabricating graphene electronic device i.e. FET, of radio frequency device, involves exposing graphene layer in channel formation region by wet etching metal protection layer and metal layer using photoresist pattern.

HEO J, CHUNG H, SEO S, LEE S, YANG H

Graphene-based terahertz (THz) device has electrodes which are so aligned to prevent short circuit through liquid crystal layer and surface of top and bottom graphene layer are each covered by layer of dielectric material.

WU Y, YANG H, QIU X