国家/地区 中国（47）
IPC部 C（23） H（13） B（11）
G（10）
IPC大类 H01（13） C01（11） G01（9）
B01（7） C08（7） C23（3）
C02（2） C09（2） C30（2）
IPC小类 C01B（11） G01N（9） C08K（6）
C08L（6） B01J（5） H01L（5）
H01M（5） C23C（3） B01D（2）
C02F（2） C08G（2） C08J（2）
C09K（2） C30B（2） H01G（2）
IPC C01B031/04（10） C08K003/04（5） C08K009/04（3）
H01L021/336（3） B01D067/00（2） B01D069/12（2）
C02F101/38（2） C08L067/04（2） C08L071/08（2）
C23C016/26（2） C23C016/56（2） G01N027/30（2）
G01N027/48（2） G01N033/53（2） H01L029/78（2）
发明人 ZHANG H（49）
公开年 2014（22） 2015（21） 2016（6）
申请年 2014（49）
专利权人 SHANGHAI INS.（7） SEMICONDUCTO.（5） SEMICONDUCTO.（2） UNIV ANHUI T.（2）
UNIV BEIJING.（2） UNIV GUANGDO.（2） UNIV NANJING.（2） UNIV SHANGHA.（2）
ZHANG H（2）

Method for preparing lithium iron phosphate/graphene composite for use as lithium ion battery positive pole material, involves dissolving iron, phosphorus and lithium compound in water, adding complexing agent, followed by drying.

LIU B, LIU G, WANG Q, ZHANG H, YANG R, ZHANG X, ZHAO T, GONG S, FAN T, JIANG D

FinFET device manufacturing method, involves forming adjacent fin shape structure with forming hole that is filled with oxidation graphene material, and removing sample grade of sample stacking structure.

ZHANG H, ZHANG C

Preparation of sulfonated graphene sulfur-modified carbon electrode used as anode in lithium sulfur battery, involves dispersing lithiated sulfonated graphene and adhesive in dispersant, and spraying onto electrode.

ZHOU W, ZHANG H

Method for preparing semiconductor structure, involves providing substrate, covering surface of substrate with etch stop layer, forming metal layer followed by forming first graphene layer and storage medium layer on second graphene layer.

ZHANG H, SONG Y

Forming method of FinFET, involves forming fin across grid electrode structure on isolation layer surface, and providing grid structure to partially cover first fin portion side wall or top portion and graphene layer.

ZHANG H, ZHENG Z

Method of forming fin type FET, involves forming gate structure on surface of graphene layer across fin portion and covering on portion of graphene layer on top portion and side wall of fin portion.

ZHANG H

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Lead-acid battery positive electrode lead paste comprises red lead, short fiber, stannous sulfate, sulfuric acid, deionized water, ethylene oxide/graphene composite, and lead powder.

FANG M, WANG B, ZHANG H, ZHANG L

Method for representing graphene, involves forming graphene on substrate, and followed by judging damage condition of graphene surface according to corrosion degree of lower part of graphene substrate.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Method for determining use of chemical vapor deposition grown graphene crystal orientation of polycrystalline copper substrate surface, has determining use of graphene crystal orientation of copper substrate surface.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G