国家/地区 中国（8）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8） C01B（2）
IPC C23C016/02（8）
发明人 ZHANG L（8）
公开年 2022（3） 2016（2）
申请年 2021（2）  2022（2） 
专利权人 SHANDONG YUN.（3）

Preparation method of two-dimensional molybdenum disulfide tungsten alloy film, involves continuously introducing argon gas, until tubular furnace is cooled to room temperature, after growth is finished.

ZHANG Q, ZHAN Y, LIN N, ZHANG L

Preparation of graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning copper foil substrate and silicon dioxide/silicon substrate, growing molybdenum-disulfide film and depositing graphene thin membrane.

ZHANG L

Preparation method of two-dimensional (2D) nanometer tungsten disulfide semiconductor film, involves placing ceramic boat in central position of high temperature constant temperature zone in tubular furnace respectively.

ZHANG L

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L

In-situ growing of graphene on metal surface based on laser comprises e.g. introducing powdered metal nickel on the metal substrate using laser, pre-coating the solid carbon source on the alloy coating and irradiating using laser.

YE X, DONG R, YANG Y, SUO G, FENG L, HOU X, ZHANG L

Preparation of graphene on silicon metal-free catalyst comprises taking silicon dioxide sputtering substrate, magnetron sputtering hexagonal boron nitride, chemical vapor depositing, and growing graphene on boron nitride film.

ZHANG L

Production of graphene protective film-containing magnesium alloy involves cleaning magnesium alloy surface, removing stains and passivation film, soaking in protective agent, forming protective film, and chemical vapor depositing.

LI Y, ZHANG L

Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition reaction chamber by electrochemically polishing component part, depositing catalytic reaction layer, protecting and depositing graphene layer.

FANG C, JIN K, LIU X, WANG L, YANG C, ZHANG L, ZHANG Y