国家/地区 中国（9）
IPC部 H（8） B（3）
IPC大类 H01（8） B82（3）
IPC小类 H01L（6） B82Y（3） H01M（2）
IPC B82Y010/00（2） H01L021/04（2） H01L029/49（2）
H01L029/78（2）
发明人 ZHAO H（9）
公开年 2012（9）
申请年 2012（6）  2011（3） 
专利权人 UNIV PEKING（6） UNIV SHANGHA.（3）

Nanophase sulfur/graphene oxide composite electrode material preparation method, involves washing mixture with ethanol, and drying mixture to obtain nanometer sulfur/graphene oxide composite material.

PAN L, SHI L, XU J, ZHAO H, XING S

Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.

FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T

Large scale preparation of high conductivity graphene for electrode material of lithium ion battery, comprises subjecting graphite sheet to chemical oxidation, processing in oven, adding hydroiodic acid, stirring, centrifuging and drying.

DONG X, PAN L, XU J, ZHAO H, XING S

Silicon dioxide pattern processing method involves transferring image of graphene to silicon dioxide substrate after etching silicon dioxide film by etching solution.

FU Y, HUANG R, LI P, REN L, ZHAO H, WEI Z, ZHANG X

Graphene FET for flexible display device, has graphite alkene material with source and drain electrode that is provided with wrapping medium layer on graphene material through zinc oxide nano-meter wire.

FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Integrated circuit metal interconnection structure, has upper layer metal interconnection connected with metal through hole, and single layer or multi-layer graphene arranged on surface of upper layer metal interconnection.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Carbon-based nanometer material transistor preparing method, involves leading electrodes at two ends of carbon nanometer tube, and depositing conductive material at two ends of graphene for forming electrode.

CAO Y, CUI X, ZHANG X, HUANG R, FU Y, ZHAO H, WEI Q, WEI Z, YIN J

Method for manufacturing graphene transistor, involves transferring graphene to upper part of groove structure of carbon nano-tube, and educing conductive materials deposited on two ends of graphene.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Manganese silicate lithium/graphene composite lithium ion positive material preparation method, involves calcinating pieces of precursor in nitrogen atmosphere at specified temperature to obtain target product.

PAN Q, WU X, XU J, YUAN A, ZHAO H