国家/地区 中国（18）
IPC部 C（12） H（7） B（5）
IPC大类 C01（9） H01（7） B82（4）
C30（3）
IPC小类 C01B（9） B82Y（4） H01L（4）
C30B（3）
IPC C01B031/04（6） B82Y040/00（3） C01B031/02（3）
C30B029/02（3） H01L021/04（2） H01L023/522（2）
发明人 ZHAO Y（18）
公开年 2012（18）
申请年 2012（14）  2011（4） 
专利权人 UNIV XIDIAN（7） SHANGHAI IC .（2） SHANGHAI INT.（2） UNIV SHANGHA.（2）

Preparing three dimensional graphene foam, comprises processing graphene oxide solution using Hummers method to obtain pure exfoliated graphite, and taking luteinizing graphene oxide solution and then diluting with distilled water.

ZHAO Y, QU L

Graphene/dual-phase calcium phosphate composite material is obtained using graphene nanosheet as tough phase and dual-phase calcium phosphate as substrate in specific mass ratio.

CHUI P, LIANG Y, SUN K, SUN X, WANG W, WANG Y, ZHAO Y

Carbon/lithium stannate/graphene composite cathode material, is prepared by mixing solution A and solution B with major histocompatibility Complex /peptide complex and graphene suspension, where solution A comprises lithium hydroxide.

HE Q, HUANG Y, WANG Q, WANG X, ZONG M, ZHANG W, ZHAO Y

Manganese dioxide-titanium dioxide and graphene-porous inorganic ceramic membrane catalytic denitration material, comprises porous inorganic ceramic membrane, manganese dioxide, titanium dioxide and hydrocarbon resin material.

DONG C, QIN W, WANG T, YANG Y, ZHAO Y

Manufacture of nickel film-containing graphene nano ribbon involves forming carbon-silicon carbide epitaxial film on carbonized layer formed on silicon substrate, depositing nickel film, annealing and removing nickel film.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon used in manufacture of microelectronic device, involves preparing masking plate by isolation strip and ion-implantation strip, and controlling width of strips, and injecting carbon ions to substrate.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanobelt for microelectronic devices, involves injecting silicon ions into silicon carbide, pyrolyzing to form carbon film, depositing nickel film on substrate, placing carbon film on nickel film, and annealing.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y

Preparation of graphene nanoribbon by growing carbide layer on silicon substrate chip, growing cubic silicon carbide heteroepitaxial film, injecting carbon ions, pyrolyzing to generate carbon film, placing on copper film, and annealing.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Graphene nanometer belt preparing method, involves cleaning silicon carbide wafer to remove pollutant on surface, and heating to specific degrees centigrade and specific constant temperature time.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y

Nickel membrane annealed graphene nanobelt preparation for making microelectronic apparatus includes injecting silicon ions in appointed zone on grown silicon carbide, pyrolyzing, and electronic beam depositing nickel membrane on substrate.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y