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欧洲专利局(EPO)(20)
IPC部
H(18)
C(14)
B(6)
IPC大类
H01(18)
C01(14)
B82(5)
B01(2)
C07(2)
IPC小类
C01B(14)
H01M(11)
H01G(8)
H01L(6)
B82Y(4)
H01B(4)
B01J(2)
C07C(2)
IPC
C01B031/02(12)
C01B031/04(10)
H01G011/36(5)
H01M004/58(5)
H01M004/583(5)
H01M004/62(5)
B82Y040/00(4)
H01M004/04(4)
B82Y030/00(3)
H01L021/02(3)
H01M004/133(3)
H01M004/36(3)
H01M004/90(3)
H01M010/052(3)
B01J021/18(2)
发明人
ZHOU M(20)
公开年
2012(13)
2018(5)
申请年
2010(12)
2017(5)
2012(3)
专利权人
OCEANS KING .(14)
HAIYANGWANG .(12)
OCEAN S KING.(11)
ZHOU M(6)
SEMICONDUCTO.(5)
SEMICONDUCTO.(5)
WANG Y(5)
LIU D(2)
PAN J(2)
SHENZHEN OCE.(2)
Method for manufacturing semiconductor device i.e. dual-gate graphene semiconductor device, involves forming dielectric layer to cover graphene layer and formal dielectric layer, and upper gate electrode layer on another dielectric layer.
ZHOU M
Interconnect structure, has graphene layer on upper surface and side surface of metal interconnect line, and dielectric layer placed on substrate covering portion of graphene layer on side surface of metal interconnect line.
ZHOU M
Semiconductor device manufacture method for making solar cells, involves forming graphene layer overlying nanopillars of substrate structure, in which graphene layer is connected to each nanopillar formed overlying conductive layer.
ZHOU M
Manufacturing method of semiconductor interconnect structure, involves forming graphene layer on metal interconnect layer of semiconductor structure.
ZHOU M
Method for forming fin FET, involves forming isolation region covering catalytic material layer, forming graphene nanoribbon on catalytic material layer on upper portion of semiconductor fin, and forming gate structure on nanoribbon.
ZHOU M
Method for preparing graphene film utilized as collector of super-capacitors and lithium-ion batteries, involves washing, drying and immersing substrate into suspension of graphene with positive charges on surface for specific minutes.
WANG Y, WU F, ZHOU M
Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.
WANG Y, YUAN X, ZHOU M
Method for forming one-to-four-monolayer graphene layer on metal layer in manufacturing, e.g., magnetic tunnel junction (MTJ) spin filters for magnetoresistive RAM, by inducing segregation of carbon in metal layer to surface of metal layer.
KELBER J, ZHOU M, MI J U
Preparation of platinum-ruthenium nanoalloy/graphene catalyst for proton exchange membrane fuel cell, involves supporting platinum-ruthenium nanoalloy on graphene, filtering obtained platinum-supported graphene, cleaning and drying.
ZHOU M, ZHONG L, WANG Y
Preparation of platinum-graphene catalyst for proton exchange membrane fuel cell, involves dripping graphene oxide solution in reverse micelle system containing aqueous solution of chloroplatinic acid, and supporting platinum on graphene.
ZHOU M, ZHONG L, WANG Y
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