国家/地区 美国（9） 欧洲专利局（EPO）（6） 世界知识产权组织（6） 中国（5） 韩国（5） 日本（3） 新加坡（2） 台湾（2）
IPC部 B（9）
IPC大类 B32（9）
IPC小类 B32B（9）
IPC B32B009/00（9）
发明人 JOHNSON B Y（2） MAZUMDER P（2） SONI K K（2）
公开年 2015（4） 2016（4）
申请年 2015（9）
专利权人 CORNING INC（2） INT BUSINESS.（2）

Method for transferring graphene elements onto substrate, involves introducing graphene element onto liquid film, and reducing distance between substrate and graphene element until graphene elements are set on placeholders of substrate.

KIREEV D, SARIK D, WOLFRUM B, OFFENHAEUSSER A, OFFENHAUSSER A

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Formation process of graphene-coated glass, involves heating sandwich structure to predetermined temperature above release temperature of thermal release tape to remove tape or graphene from flexible glass substrate.

JOHNSON B Y, LIU X, MAZUMDER P, SONI K K, CHEN T L, MARTINFRANCES M M, PRUNERI V, CHEN T, MARCHENA M, MARTIN F M M

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Solid state device structure for graphene device for use in microelectronics application, has single crystalline graphene monolayer placed on substrate including surface area of greater than specific range.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H