国家/地区 中国（4） 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 B（8） H（5） G（4）
C（3）
IPC大类 B82（8） H01（5） G06（3）
C01（2） C23（2） G01（2）
IPC小类 B82Y（8） H01L（5） C01B（2）
C23C（2） G06F（2） G06N（2）
IPC B82Y010/00（8）
发明人
公开年 2022（4） 2023（4）
申请年 2022（8）
专利权人

Assembly used as superconducting diode assembly, has structure comprising layer of material positioned in contact with layer of another material to form interface between material and another material, and control apparatus to control ferromagnetic state associated with interface.

LI J, SCHEURER M S, LIN J, SIRIVIBOON P, MORISSETTE E

Multi bridge channel field effect transistor for use in e.g. memories, has gate insulating layer that surrounds first channel layer, and gate electrode that surrounds first channel layer with gate insulating layer.

KIM C, KIM U, JUNG A, BYUN K, JIN Y, JIN C, JUNG A R, BYUN K E

Method for preparing two-dimensional material composite proton exchange membrane for separating hydrogen isotopes, involves collying nano-sheet dispersion liquid to room temperature for taking out formed film as material composite proton exchange membrane for hydrogen isotope separation.

ZHENG M, LI X, DING W, ZHOU X, LIU W

Van der Waals heterostructure for use in three-terminal floating gate device used in artificial neural network simulation, has layer of graphene, layer formed of tin disulfide and connected to layer of hexagonal boron nitride.

WANG Y, CHEN W

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Preparing surface plasmon resonance biological sensing chip useful in field of surface plasmon resonance for analyzing biomolecule interaction, comprises e.g. covering noble metal layer on surface of substrate, and depositing graphene nano-layer and nano-diamond particle layer.

CHEN L, LIU G, ZHENG C, XIAO L, LUO Y, CHEN Y

Discrete or vertical power transistor device e.g. metal oxide semiconductor FET, for integrated circuit, has control electrode whose carbon adjoins dielectric opposite to channel region, where control electrode comprises gate electrode.

STORBECK O, SCHULZE H, SCHLOESSER T, MURI I, SIEMIENIEC R, STOBECK O, SCHLOSSER T

Photoelectronic device e.g. solar cell, has energy conversion layer with hybrid structure that includes graphene quantum dots bonded to surfaces of silica nanoparticles, and electrodes formed on upper and lower parts of conversion layer.

THOTA N, THEJOMOORTHY K, SHARMA M, DEVARAPU C S, BHAVANI P, BAJIVALI S, POKALA R K V, SUBBARAYAN V, MANJULA M, RAO C M M P, BOORA S