国家/地区 美国（50） 世界知识产权组织（39） 日本（27） 韩国（27） 中国（26） 欧洲专利局（EPO）（18） 台湾（9） 加拿大（4） 英国（3） 香港（3） 新加坡（3） 土耳其（3） 德国（2） 西班牙（2） 印度（2） 意大利（2）
IPC部 B（60）
IPC大类 B82（60）
IPC小类 B82Y（60）
IPC B82Y040/00（60）
发明人 GUO S（3） OZKAN C S（3） OZKAN M（3）
ABDELKADER A M（2） CHENG Q（2） DRYFE R A W（2）
JEFF R A W（2） JUNG Y（2） JUNG Y S（2）
KAWABATA A（2） KIM Y（2） KIM Y S（2）
KINLOCH I A（2） LEE C（2） LEE C S（2）
公开年 2014（32） 2013（20） 2015（8）
申请年 2013（60）
专利权人 DOKURITSU GY.（3） NAT INST ADV.（3） SAMSUNG ELEC.（3） UNIV CALIFOR.（3）
FUJITSU LTD（2） GUO S（2） NAT INST MAT.（2） OZKAN C S（2）
OZKAN M（2） UNIV MANCHES.（2） UNIV NANYANG.（2） UNIV NORTHWE.（2）
WANG W（2）

Preparing anthracite based graphene oxide comprises e.g. preparing ultra-clean anthracite powder, adding dispersant, carrying out ultrasonication to prepare dispersion liquid, and preparing graphene oxide colloid solution.

ZHANG L, ZHANG M

Patterning of graphene oxide film used in production of electronic component, involves depositing graphene oxide film on substrate, reducing portion of film, and producing pattern of reduced graphene oxide area in graphene oxide film.

BORINI S, WEI D, WHITE R, BESSONOV A A

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor, consists of paper based substrate having top surface and bottom surface, and graphene oxide and carbon nanotube composite deposited on top surface.

WANG W, GUO S, OZKAN C S, OZKAN M

Preparing graphene nanoplate (GNP) involves preparing expanded graphite (EG), and exfoliating, grinding, or cracking EG by colliding between expanded graphite by gas-phase high speed to crack EG induced by gas-phase-collision.

CHANG K I, SONG C K, KIM D H, HUR S H, KIM D, HSU S, SONG Z, ZHANG G

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Method for growing germanium quantum point for preparing graphene-germanium quantum point composite material for e.g. LED, involves forming graphene layer on thin film, and performing graphene layer and germanium thin film annealing process.

LI Z, BAI B, YANG X, WANG X, XU Y, DAI Q, QIU X

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P