国家/地区 日本（38）
IPC部 B（38）
IPC大类 B82（38） C01（38） H01（27）
B32（6） C07（5） C23（5）
C25（5） B01（4） C09（4）
B05（2） B22（2） C04（2）
C08（2） H05（2）
IPC小类 B82Y（38）
IPC B82Y040/00（38）
发明人 TANG J（3） ABDELKADER A M（2） CAI J（2）
CHENG Q（2） DRYFE R A W（2） FASEL R（2）
FENG X（2） GUO S（2） JEFF R A W（2）
KAWABATA A（2） KINLOCH I A（2） MILLEN K（2）
MUELLEN K（2） MULLEN K（2） OZKAN C S（2）
公开年 2014（18） 2013（13） 2015（7）
申请年 2013（38）
专利权人 DOKURITSU GY.（4） NAT INST ADV.（4） BASF CHINA C.（3） BASF SE（3）
NAT INST MAT.（3） UNIV MANCHES.（3） DOKURITSU GY.（2） EMPA EIDGENO.（2）
EMPA MATERIA.（2） FUJITSU LTD（2） GUO S（2） MAX PLANCK G.（2）
OZKAN C S（2） OZKAN M（2） UNIV CALIFOR.（2） WANG W（2）

Preparing anthracite based graphene oxide comprises e.g. preparing ultra-clean anthracite powder, adding dispersant, carrying out ultrasonication to prepare dispersion liquid, and preparing graphene oxide colloid solution.

ZHANG L, ZHANG M

Patterning of graphene oxide film used in production of electronic component, involves depositing graphene oxide film on substrate, reducing portion of film, and producing pattern of reduced graphene oxide area in graphene oxide film.

BORINI S, WEI D, WHITE R, BESSONOV A A

Production of graphene oxide and/or graphite oxide nanoplatelet structure used for e.g. sensors, involves passing current through cell to intercalate anions into graphitic positive electrode and exfoliating.

ABDELKADER A, KINLOCH I, DRYFE R

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor, consists of paper based substrate having top surface and bottom surface, and graphene oxide and carbon nanotube composite deposited on top surface.

WANG W, GUO S, OZKAN C S, OZKAN M

Method for growing germanium quantum point for preparing graphene-germanium quantum point composite material for e.g. LED, involves forming graphene layer on thin film, and performing graphene layer and germanium thin film annealing process.

LI Z, BAI B, YANG X, WANG X, XU Y, DAI Q, QIU X

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Defect repairing method of graphene film e.g. planar crystalline carbon film, involves irradiating laser by giving carbon source to portion identified as defect portion of film, and restoring local defect of film.

OKIKAWA Y, ISHIHARA M, OMURA H, HASEGAWA M

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Carbon material used for forming structure, comprises nanocarbon, graphene, or graphite, and has structure in which nanocarbon, graphene, or graphite are integrated through covalent bond between carbon-carbon, or van der Waals binding.

HIURA H, TSUKAGOSHI K