国家/地区 美国（38）
IPC部 B（38）
IPC大类 B82（38） H01（30） C01（10）
B32（5） B05（4） C23（3）
C25（3） C08（2） G01（2）
G06（2） H04（2）
IPC小类 B82Y（38） H01L（25） C01B（10）
H01B（8） B32B（5） H01M（5）
B05D（4） H01G（4） C23C（3）
C25D（3） C08K（2） C08L（2）
G01N（2） H04R（2）
IPC B82Y099/00（38）
发明人 LEE S（5） CHUNG H（4） CHUNG H J（4）
HEO J（4） HEO J S（4） LEE S H（4）
SEO S（4） SEO S A（4） YANG H（4）
YANG H J（4） JIANG K（3） KIM J Y（3）
LIN X（3） ADACHI K（2） FAN S（2）
公开年 2012（21） 2011（10） 2013（7）
申请年 2011（38）
专利权人 SAMSUNG ELEC.（6） INT BUSINESS.（4） TOSHIBA KK（4） HON HAI PREC.（3）
UNIV TSINGHU.（3） ELECTRONICS .（2） HONGFUJIN PR.（2） SONY CORP（2）
US SEC OF NA.（2）

Manufacturing method for semiconductor structure, e.g. graphene FET involves forming graphene FET on seed material, and removing seed material.

ADKISSON J W, DUNBAR T J, GAMBINO J P, LEITCH M J, LEACH M, LEACH M J

Producing graphene nanomesh based charge sensor, by generating holes in graphene to create graphene nanomesh, passivating edge of each hole of mesh, functionalizing passivated edge of each of holes of nanomesh with chemical compound.

AFZALIARDAKANI A, HAN S, KASRY A, MAAROUF A, MARTYNA G J, NISTOR R, TSAI H

Plate varactor for integrated circuit used as part of electronic product has single layer of graphene material disposed over first electrode in contact with dielectric layer to contribute quantum capacitance component to dielectric layer.

CHEN Z, HAN S, KOSWATTA S O, VALDES G A

Hybrid material, useful for removing heavy metal (arsenic, cadmium, mercury, antimony or bismuth) in wastewater, comprises graphene and iron oxide.

KIM K S, LEE J W, VIMLESH C, HWANG I C, CHUN Y

Hydrocarbon composite electrolyte membrane used for membrane electrode assembly, comprises composite electrolyte membrane layer having structure in which graphene nanostructures are embedded into hydrocarbon electrolyte membrane.

LEE H H, LEE H

Preparing surface of epitaxial graphene sample for atomic layer deposition (ALD) of dielectric in ALD reactor, comprises pre-treating (e.g. immersing in e.g. hydrofluoric acid) sample ex situ outside reactor and then in situ inside reactor.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Preparing graphene sheets involves immersing, in a solution of electrolyte, two electrode portions including carbon material or metal, where electrolyte is e.g. acid, anionic surfactant; and causing potential to exist between electrodes.

LI L, SU C

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Thermoacoustic device for electronic devices has signal input device that input signals to sound wave generator comprising graphene layers and located on surface of carbon nanotube composite structure and insulated from structure via matrix.

JIANG K, LIN X, XIAO L, FAN S