国家/地区 日本（109）
IPC部 C（109）
IPC大类 C01（109） H01（58） B82（56）
B32（21） C23（20） B01（13）
C09（10） B05（6） C07（6）
C08（6） C25（6） C30（5）
C03（4） H05（4） B44（3）
IPC小类 C01B（109）
IPC C01B031/02（109）
发明人 JIANG K（8） LIN X（8） FAN F Y（7）
FAN S（7） XIAO L（7） LIN X Y（5）
FUJII K（3） IM H Y（3） MATSUKAWA N（3）
BAE S K（2） CHIBA Y（2） CHUNG H（2）
CHUNG H J（2） COLLINS W R（2） FENG X（2）
公开年 2012（58） 2013（36） 2011（15）
申请年 2011（109）
专利权人 HON HAI PREC.（8） HONGFUJIN PR.（8） PANASONIC CO.（8） UNIV TSINGHU.（8）
DOKURITSU GY.（4） FUJITSU LTD（4） JX NIPPON MI.（4） NAT INST MAT.（4）
SAMSUNG ELEC.（4） SONY CORP（4） TOSHIBA KK（4） FUJI ELECTRI.（3）
UNIV MANCHES.（3） UNIV SINGAPO.（3） UNIV SINGAPO.（3） CENT NAT REC.（2）
DENSO CORP（2） DOKURITSU GY.（2） GRAPHENE SQU.（2） KRI INC（2）

Interlayer substance insertion graphite for manufacturing flaky graphite, is obtained by inserting interlayer substance chosen from at least one of maleic acid, maleic anhydride and maleate, between graphene of graphene laminate.

WADA T, TOYODA M

Isocyanate group-modified carbon material contains diisocyanate compound in which isocyanate group couples with graphene-type carbon material.

WADA T, TSUBOKAWA N, TAKUYA W

Copper foil used for manufacturing graphene for e.g. separator for fuel cell and transparent electrode, comprises copper plating layer and/or copper sputter layer, and has specified value of surface roughness and plane ratio.

KOBIKI T, SAKAGUCHI K

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Manufacture of semiconductor element used for electronic device, involves forming opening portion which reaches back surface of catalyst layer formed on substrate, forming graphene on back surface and removing portion of catalyst layer.

KOJIMA E, FURUICHI T

Manufacture of graphene substrate for semiconductor chip involves electrolytically polymerizing graphene carbon source on electroconductive or semiconductor substrate and forming graphene layer.

ONO T, WATANABE M, KOIDE Y

Making graphene nano-sheets, by placing expandable graphite within chamber, applying vacuum to the chamber, and applying electric current to induction heat expandable graphite within chamber under vacuum to form expanded graphite.

WU Y, GARDNER S J, YU Y

Growth method of graphene used for semiconductor element, involves performing chemical vapor deposition of graphene, forming metal catalyst crystal thin film, and exposing portion of surface of upper portion of crystal substrate.

NOZAWA K

Nanographene comprises one-layer graphene layer or multiple-layered overlapping graphene layers, has specified diameter and is obtained by apparatus containing reactor, heating unit, hydrocarbon supply unit and exhausting unit.

KON M, IDE K, YOSHIKAWA J, KOSHIRO K, MINE T, NOMA T, HIRABAYASHI H, MURAYAMA H

Manufacture of graphene thin film for e.g. semiconductor material involves coating solution or dispersion liquid of conductive polymer on surface of metal material, forming coating film, and performing microwave process.

UEDA M, OMOTA A