国家/地区 日本（21）
IPC部 B（21）
IPC大类 C01（21）
IPC小类 C01B（21）
IPC C01B031/02（21）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（6） 2013（3） 2014（3） 2015（3） 2010（2） 2012（2）
申请年 2009（5）  2011（5）  2012（4）  2014（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） CENT NAT REC.（2）
DOKURITSU GY.（2）

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K