国家/地区 日本（7）
IPC部 C（7）
IPC大类 C01（7） H01（6） B32（2）
B82（2） C23（2）
IPC小类 C01B（7）
IPC C01B032/15（7）
发明人 MIHASHI F（3） MITSUHASHI F（3） OKADA M（3）
TATENO Y（3） UENO M（3） FUKIDOME H（2）
SUEMITSU M（2）
公开年 2017（4） 2018（3）
申请年 2017（7）
专利权人 SUMITOMO ELE.（3） UNIV TOHOKU（2）

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Graphene structure for use in a semiconductor device, comprises a multilayer graphene that is laminated with graphene sheets, where three interlayer materials are presented between the graphene sheets of the multilayer graphene.

MIYAZAKI H, YOSHIDA T, KATAGIRI M, YAMAZAKI Y, SAKAI T

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Surface-treated graphene used for manufacturing dispersion liquid for forming composite particles for electrode paste, is obtained by adhering aromatic amine compound or its neutralized salt with graphene.

MANABE K, TAMAKI E, KAWASAKI M

Substrate for electronic device, such as a field-effect transistor, includes graphene film having atomic arrangement oriented in relation to atomic arrangement of material forming the surface layer region of support substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, MIHASHI F