国家/地区 日本（5） 中国（4） 美国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 加拿大（2） 韩国（2） 新加坡（2）
IPC部 B（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/182（7）
发明人 BEDWORTH P V（2） HEISE S E（2） SINTON S W（2）
SWETT J L（2）
公开年 2017（7）
申请年 2016（5） 
专利权人 LOCKHEED MAR.（2）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Manufacture of graphene substrate involves laminating layer comprising catalytic metal, laminating layer on surface side of above layer, heat treating obtained layer, and cooling to form graphene between substrate and layer.

NARUTSUKA S, YAMADA J

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Imaging production of one-dimensional carbon nanotube and three-dimensional graphene composite material by patterning growth substrate, soaking in hydrofluoric acid solution, ultrasonically processing and magnetic control sputtering.

YU Y, HU Y, SUN T, YANG J, WEI D, SHI H, DU C