国家/地区 世界知识产权组织（13）
IPC部 C（13） H（10） B（4）
G（2）
IPC大类 C01（13） C23（9） H01（9）
B82（4） C30（3） H05（3）
B01（2） C08（2） C09（2）
IPC小类 C01B（13）
IPC C01B032/186（13）
发明人 IFUKU R（3） MATSUMOTO T（3） WADA M（3）
BADCOCK T J（2） DIXON S（2） GUINEY I（2）
KABUKI N（2） YAMADA H（2）
公开年 2022（10） 2023（3）
申请年 2022（13）
专利权人 TOKYO ELECTR.（4） PARAGRAF LTD（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Electromagnetic interference suppressing material used as radio wave absorber, noise suppression sheet, semiconductor sealing material, sealing sheet, and wire coating material, comprises base material containing organic substances and inorganic substances, and powdered carbon material.

NISHIHARA H, YOSHIDA S, UCHIDA K

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Transferring one or more nanostructures from one substrate to another substrate by applying coating of crosslinkable copolymer over one or more nanostructures on surface of substrate, heating, transferring nanostructures and copolymer onto another substrate surface, and removing copolymer.

ARNOLD M S, JACOBBERGER R M, GOPALAN P, DWYER J H

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M