国家/地区 中国（14） 美国（2） 世界知识产权组织（2）
IPC部 C（15）
IPC大类 C01（15） B82（2） C08（2）
H01（2）
IPC小类 C01B（15）
IPC C01B032/186（15）
发明人 LIU H（15）
公开年 2019（3） 2022（3） 2017（2） 2018（2） 2020（2）
申请年 2016（3）  2019（3）  2021（3）  2018（2）  2022（2） 
专利权人 WUXI GRAPHEN.（4） BEIJING GRAP.（3） INST METAL R.（3） UNIV PEKING（3）
WUXI SIXTH E.（2）

Preparing a high-performance thermal interface material by using mold to squeeze three-dimensional porous metal, heating, performing catalytic growth of graphene on the surface of a porous metal substrate and using vacuum impregnation process to fill polymer substrate in the porous graphene pores.

CHENG H, LIU H, MA C, REN W

Inducing neural differentiation of mesenchymal stem cell based on electromagnetic induction involves inoculating mesenchymal stem cells on graphene film, adding mesenchymal stem cell proliferation medium to obtain culture system, and placing system in induction device containing permanent magnet.

CHANG L, LIU Z, HU S, GAO H, LIU H, GUO Z, SUN C

Method for preparing graphene film, involves obtaining three-dimensional connected graphene framework structure with high density, obtaining three-dimensional graphene porous, and pressing obtained three-dimensional graphene porous to form graphene film.

CHENG H, LIU H, MA C, REN W

Use of graphene film as high temperature resistant thermal interface material or heat dissipation film material.

CHENG H, LIU H, MA C, REN W

Forming fiber for material by positioning sheet of graphene or oxidative analog of graphene on surface, positioning first and second abutment components on first and second sides of sheet, respectively and applying force to induce bending.

SALIM M G, LIU H, JACOBS T D, KIM M A, THIMONS L A

Immersion spray etching comprises covering side of graphene-grown substrate with graphene film that needs to be retained with protective film, adding to flowing etching solution to etch substrate to form protective film/graphene.

LI T, LIU H, MAO D, ZHANG J

Preparing large-area multilayer graphene comprises providing substrate in reaction chamber, annealing, introducing carbon source, performing chemical vapor deposition reaction and adding water vapor during chemical vapor deposition reaction.

LIU Z, CHEN B, SUN L, LI Y, DING Q, ZHAO Z, LIANG Y, WANG Y, LIU H

Graphene powder continuous discharge preparation method involves passing inert gas into microwave plasma chemical vapor deposition system, generating plasma, passing carbon source, and performing graphene powder vapor phase growth.

ZHANG J, SUN Y, LIU H, GAO Z, XU S

Preparation of graphene powder by subjecting carbon source to chemical vapor deposition process without using substrate.

ZHANG J, XU S, GAO Z, SUN Y, LIU H

Vertical tube furnace useful for growing graphene comprises a furnace body, the furnace body is provided with process cabin, a transition chamber is disposed above or below the furnace body.

SHEN D, TAN P, LIU H, TAN H