国家/地区 中国（16） 美国（3） 日本（2） 韩国（2）
IPC部 C（17） B（8） H（8）
G（3）
IPC大类 C01（17） B82（8） H01（7）
G01（3） C08（2） C23（2）
IPC小类 C01G（17） C01B（15） B82Y（8）
G01N（3） H01L（3） H01M（3）
C23C（2）
IPC C01G039/06（17）
发明人 LI P（2） LI X（2） WANG Y（2）
ZHANG Z（2）
公开年 2021（17）
申请年 2021（17）
专利权人

Iron atom doping inducing 1 T-molybdenum sulfide/graphene composite material for preparing hydrogen by electrically catalyzing and decomposing water, comprises molybdenum disulfide doped and induced by using non-noble metal iron.

FU L, LI W, GAO X

Preparing two-dimensional material nano-sheet using N,N-diethyl-meta-toluamide stripping used as inorganic filler for e.g. aerospace, comprises adding two-dimensional material into DEET, ultrasonically treating, removing unstripped two-dimensional material and centrifuging supernatant.

LIU R, LIU J, SONG J, NIE X, SANG X

Ternary composite material useful in e.g. electrode material of super capacitor comprises hollow carbon nano material, molybdenum disulfide nano sheet and graphene nano sheet.

LAI Y, NING Y, WANG L, ZHAO B

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Transferring two-dimensional transition metal chalcogenide based on polyvinyl alcohol used for manufacturing heterojunction, by dripping polyvinyl alcohol solution on growth substrate, heating to form film, sticking side of film with metal chalcogenide compound, lightly pressing, and removing film.

XIE Y, ZHANG Z, BAI Y, WANG H, LIU Z, LI P

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Polymer modified graphene material useful in preparing gas sensor for detecting nitrogen dioxide comprises molybdenum disulfide, graphene, graphene quantum dot and polymer.

HUANG M, YING S, WU Z, WANG Y

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Transfer process for preparing low-dimensional material stack structure useful for functional device, comprises e.g. placing sample on carrier B, locating carrier A above sample without touching it and dropping adsorption solution on sample.

LIU N, ZHANG Y, ZHANG W

Preparing molybdenum disulfide/sulfide solid electrolyte composite anode material comprises e.g. mixing molybdenum trioxide powder and sulfide solid electrolyte in argon or nitrogen atmosphere by mechanical ball milling and then calcining.

LIU F, JING S, HU Y, JIANG L, JIA M, ZHANG Z