国家/地区 中国（10）
IPC部 C（10）
IPC大类 C23（10） H01（4） C01（2）
C30（2）
IPC小类 C23C（10） H01L（4） C01B（2）
C30B（2）
IPC C23C014/30（10）
发明人 HU J（2） LI P（2） ZHANG X（2）
公开年 2022（10）
申请年 2021（5）  2022（5） 
专利权人

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Method for desorbing roll-to-roll type, involves covering mask of preset shape on substrate, depositing nano-film on substrate, removing mask plate, conveying substrate deposited nano film to roller, and continuously performing ultrasonic vibration to substrate.

WU Y, MEI Y

Iron-based substrate for producing graphene, is derived from factory waste carbon iron sheet having specified thickness, surface roughness and carbon content.

ZANG X, CAO N, QI H, SHAO Q

Method for preparing self-cleaning composite surface enhanced Raman scattering (SERS) substrate used in surface science, analysis science and biological science involves sputtering gold nano-particles to surface of zinc oxide film to obtain SERS substrate.

LI J, ZHANG X, SHI G, WANG B, ZHANG J

Light emitting diode transparent electrode useful for mobile phone, comprises first layer electrode and second layer electrode set on epitaxial layer, epitaxial layer includes P/N electrode finger and P/N bonding pad, and first layer electrode includes chromium layer and transparent material layer.

HU J, ZHANG X, LUO G

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Preparing graphene by relatively closed area solid-phase process, comprises successively or simultaneously depositing carbon source layer and catalytic metal layer on surface of clean substrate to obtain graphene preparation precursor, and heat annealing in oxygen-free or low-oxygen environment.

DUAN J, DENG L, LV T, WU H, ZHANG W, XIONG W

Preparation of graphene/metal film composite material for cycloaddition reaction, involves using electron beam evaporation method, preparing metal film on silicon plate, utilizing polymethyl methacrylate transfer method, and transferring graphene to surface of metal film.

ZHENG X, LIU W, YU X, YU Y, LIU J, YANG X

Method for growing layer thickness controllable graphene on single crystal ferromagnetic film substrate, involves cooling graphene layers to room temperature to obtain graphene with controllable layer thickness on single crystal ferromagnetic thin film substrate.

GUO Y, ZHANG Q, PENG J, LI P, HU J, WU R, PAN M, QIU W

Thermal barrier coating for aircraft engine, comprises high temperature alloy substrate to be processed from bottom to top, bonding layer, ceramic layer, yttrium oxide-graphene composite coating, and zirconium oxide composite coating.

WANG S, SUO W, PENG H, LIANG X, GUO H, LIU Z, WANG Y, HE J