国家/地区 美国（9）
IPC部 C（9）
IPC大类 C01（9） C23（9） B82（4）
H01（3） B01（2） C30（2）
IPC小类 C01B（9）
IPC C23C016/02（9）
发明人 NAGEL C J（3） SHIN H（3） BRODEUR C L（2）
BYUN K（2） BYUN K E（2） KIM C（2）
LEE C（2） LEE C S（2） LEE E（2）
SHIN H J（2） SHIN K（2） SHIN K W（2）
公开年 2021（7） 2020（2）
申请年 2020（9）
专利权人 QUANTUM ELEM.（3） SAMSUNG ELEC.（3）

Performing quantum printing metal within nanoporous carbon powder involves adding nanoporous carbon powder into reactor assembly (RA) comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon powder.

NAGEL C J

Reactor assembly comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon material, first porous frit defining floor of reactor chamber, second porous frit defining ceiling of the reactor chamber.

NAGEL C J, BRODEUR C L

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S