国家/地区 日本（10）
IPC部 C（10）
IPC大类 C23（10） H01（10） C01（7）
B82（2） C25（2） C30（2）
H05（2）
IPC小类 C23C（10） C01B（7） H01L（7）
H01R（3） B82Y（2） C25D（2）
C30B（2） H01B（2） H01J（2）
IPC C23C016/04（10）
发明人 NARKEVICIUTE I（2） SHIMIZU T（2） VARADARAJAN B N（2）
公开年 2021（4） 2013（2） 2018（2）
申请年 2021（3）  2013（2） 
专利权人 LAM RES CORP（2） YAZAKI CORP（2）

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Connector pair for use with electrical device, has first connector that includes first electrical contact unit which is provided with graphene layer on metal base material, and second connector includes second electrical contact unit electrically connected to first connector by graphene layer.

KUBO T, SEKI K, OKADA M, HATAKEYAMA K, KOGA K, SHIMIZU T, YE N, KAWAI H, KAWAI Y, GUAN H

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Method for processing substrate of MOSFET during manufacturing of integrated circuit, involves providing planarized substrate, followed by selectively depositing silicon dioxide film on first material and removing graphene layer.

TAPILY K N, MATSUMOTO T, KASHIWAGI Y, LEUSINK G J

Electrical contact for forming e.g. connector, is produced using material including layer comprising carbon material which is single graphene layer or graphene laminate on base material comprising metal material having preset resistivity.

MORI K, SHIMIZU T

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y