国家/地区 韩国（10） 美国（9） 中国（3） 世界知识产权组织（3） 日本（2）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C23C016/06（11）
发明人 LIPOMI D J（2） PARK S（2） SHIN H（2）
ZARETSKI A（2）
公开年 2014（4） 2015（3） 2013（2）
申请年 2012（3）  2013（3）  2015（3） 
专利权人 KOREA ADVANC.（2） SAMSUNG ELEC.（2） UNIV CALIFOR.（2） UNIV SUNGKYU.（2）

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Manufacture of boron-doped reduced graphene oxide used for electrode of capacitor, involves dispersing graphene oxide into aqueous solvent, adding borane-tetrahydrofuran to obtained dispersion solution, then refluxing, and cooling.

PARK S, HAN J W