国家/地区 韩国（9） 美国（8） 世界知识产权组织（7） 中国（5）
IPC部 C（9）
IPC大类 C01（9） C23（9） B01（6）
B82（5） H01（4）
IPC小类 C01B（9）
IPC C01B031/02（9）
发明人 WON D K（3） AHN J（2） AHN J H（2）
CHO S（2） HONG B（2） HONG B H（2）
KIM N Y（2） WON D（2） YEONG K N（2）
YOON J（2） YOON J H（2）
公开年 2012（6）
申请年 2012（4）  2011（3） 
专利权人 HANWHA TECHWIN CO LTD（9）

Manufacturing graphene, comprises preparing support member, disposing carbon layer and catalyst layer, forming graphene, attaching carrier to graphene and forming graphene-forming structure, separating member and removing catalyst layer.

PARK C, CHO S, PARK C H, CHO S M

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Apparatus for manufacturing graphene film, has heater that is provided to heat domain of catalyst substrate which is arranged to contact gas gushing out from gas jet unit.

YOON J, HYEOK Y J, YOON J H

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Graphene manufacturing apparatus, comprises gas supplying unit for supplying gas, gas heating unit for heating gas, deposition chamber in which substrate is disposed and inlet pipe for supplying the gas into deposition chamber.

WON D, CHO S, WON D K, YUAN D