国家/地区 日本（11）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11） C23C（11） B82Y（4）
H01L（4） B01J（3） C04B（2）
C30B（2）
IPC C23C016/26（11）
发明人 JOUVRAY A（2） TEO K B K（2）
公开年 2015（7） 2014（2） 2016（2）
申请年 2014（11）
专利权人 AIXTRON SE（2）

Graphene nano tape for use in electronic device, has inner walls that are provided with tape-shaped portion which is adjoined or attached for covering full length.

KAMISHIMA M, WATANABE H, NAGAMUNE T, KATADA A

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Thermally managed electronic component such as graphene-based heat sinks and thermal conduits, has thermal management coating that comprises layer of aligned carbon nanoparticles which is mounted on graphene coating layer.

LI A W, HUNT J H, HOWE W R

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Coated article comprises a low temperature component and a graphene coating formed from applying the graphene derivative over the low temperature component.

KALAGA M K, BHATTACHARYYA A, DEVI R M, SCHAEFFER J C, PARAKALA P, PABLA S S, SHEFFIELD J C, PALAKARA P, PABRA S S, CARAGA M K, DEVIE R M

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D