国家/地区 韩国（13） 美国（13） 世界知识产权组织（11） 中国（10） 日本（9） 台湾（7） 欧洲专利局（EPO）（5） 德国（2） 英国（2）
IPC部 C（23）
IPC大类 C01（23）
IPC小类 C01B（23）
IPC C23C016/26（23）
发明人 GLASS H（2） GUINEY I（2） IFUKU R（2）
LIM J（2） MATSUMOTO T（2） NARKEVICIUTE I（2）
THOMAS S（2） TYLER M（2） VARADARAJAN B N（2）
WALLIS R（2）
公开年 2021（23）
申请年 2020（11）  2021（9）  2019（3） 
专利权人 TOKYO ELECTR.（3） DAEJOO ELECT.（2） LAM RES CORP（2） PARAGRAF LTD（2）
UNIV SINGAPO.（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Silicon-based-carbon composite useful in cathode material of lithium secondary battery, comprises core-shell structure, where core includes e.g. silicon and magnesium silicate, and the shell includes first and second carbon layers.

HYUN L J, HUNSOO P, LEE S, HEE L, LIM J

Continuous production apparatus of multiple types of carbon film, comprises reduction section for reducing substrate placed on belt conveyor, and raw material carbon source supply section that supplies raw material carbon source.

WATANABE J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A