国家/地区 世界知识产权组织（28）
IPC部 B（28）
IPC大类 B01（28）
IPC小类 B01J（28）
IPC C23C016/26（28）
发明人 BACSA R（2） BEDWORTH P V（2） HEISE S E（2）
HONG B（2） HONG B H（2） JUNG M（2）
MOON J（2） SERP P（2） SINTON S W（2）
SWETT J L（2） YOON J（2） YOON J H（2）
ZHANG X（2）
公开年 2013（7） 2012（6） 2014（5） 2017（2） 2021（2）
申请年 2012（8）  2011（4）  2014（4）  2013（3）  2016（2）  2020（2） 
专利权人 HANWHA TECHW.（4） SAMSUNG TECH.（4） CALIFORNIA I.（2） CENT NAT REC.（2）
HANWHA AEROS.（2） INST NAT POL.（2） KOREA ADV IN.（2） LG ELECTRONI.（2）
LOCKHEED MAR.（2） UNIV SUNGKYU.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Production of graphene on metallic substrate for layered composite, involves depositing layer of carbon barrier material on metallic substrate, depositing layer of chemical vapor deposition catalyst and forming graphene on catalyst layer.

SINGH R, PATWARY S, BANERJEE P C

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W