国家/地区 韩国（12）
IPC部 C（12）
IPC大类 C01（12） C23（12） B01（5）
H01（5） B82（4） B05（3）
IPC小类 C01B（12）
IPC C01B031/02（12）
发明人 CHO S M（3） WON D K（3） CHUNG H（2）
CHUNG H J（2） HEO J（2） HEO J S（2）
HUH J（2） HUH J S（2） JUNG H（2）
JUNG H J（2） KANG S（2） KANG S R（2）
SEO D（2） SEO S（2） SEO S A（2）
公开年 2011（7） 2012（4）
申请年 2010（12）
专利权人 SAMSUNG ELEC.（3） SAMSUNG TECH.（3） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Manufacturing method of graphene, involves growing graphene on surfaces of floating sample in air.

JOO I L, CHAN Y H, KWONJAE Y, JUNG H K, YONG S Y, YONG H S, GEUN W L

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Graphene synthesis chamber has multiple through holes that are formed for connecting seating place and portal.

CHO S M, WON D K

Manufacture of graphene involves transferring base component comprising support layer, separation layer, and catalyst metal layer into chamber, passing carbon vapor source into chamber, and cooling base component.

CHO S M, WON D K

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.

CHOI K J, WOONG C S

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H