国家/地区 中国（39）
IPC部 C（39）
IPC大类 C23（39）
IPC小类 C23C（39） C01B（22） B82Y（11）
C30B（10） H01L（7） B32B（3）
B01J（2） C04B（2） C22C（2）
C25F（2）
IPC C23C016/26（39）
发明人 DENG P（5） GUO H（5） LEI T（5）
ZHANG K（5） ZHANG Y（5） BI H（4）
DING G（4） HUANG F（4） XIE X（4）
ZHOU M（4） CHAI Z（3） HAN D（3）
HAO Y（3） JIANG M（3） NING J（3）
公开年 2012（22） 2013（15） 2014（2）
申请年 2012（39）
专利权人 UNIV XIDIAN（8） CHINESE ACAD.（4） CHINESE ACAD.（4） SHANGHAI INS.（3）
DENG P（2） GUO H（2） HANWHA TECHW.（2） LEI T（2）
OCEANS KING .（2） SAMSUNG TECH.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
ZHANG K（2） ZHANG Y（2）

Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and metal catalyst substrate in presence of hydrogen and argon so as to perform carburization reaction.

GAO S, GENG X, GONG Y, LIU L, LONG M, ZHANG X, ZHU C

Preparing graphene-silicon composite material used in lithium ion battery, involves heating substrate in vacuum reaction chamber in protective gas and vacuum condition.

WANG Y, ZHONG H, ZHOU M

Normal pressure chemical vapor deposition of high quality dual layer graphene thin film comprises pre-processing copper foil by using ethanol and acetone ultrasonic cleaning, introducing acetylene gas, and cooling.

LI W, QI M, REN Z, WANG H

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Graphene load porous ceramic electrically conductive material preparation method, involves reducing porous ceramic material surface with layer of metal, and obtaining conductive material by chemical vapor deposition process in furnace.

BI H, HUANG F, ZHOU M

Method for preparing graphene/porous metal composite material i.e. photovoltaic material, involves forming mixed powder by mixing metal powder and carrying out high temperature reduction to form three-dimensional porous metal substrate.

BI H, HUANG F, ZHOU M

Composite graphene nano-sheet used in coating silicon nano-cone for corner crimping machine comprises surface with silicon nano-cone array substrate forming nano-layer of graphene on surface of silicon cone array.

TIAN S, LI J, GU C, LI L, SUN W, XIA X

Method for forming e.g. multi-layered graphene layer deposited on glass substrate, involves utilizing microwave with electron cyclotron resonance mechanism to excite carbon-containing gas to deposit graphene layer on substrate.

HUANG K, CHANG C, HSIEH Y, CHIU P, MEDINA H, QIU B, XIE Y, ZHANG Z, MEDIONA H, HUANG K P, CHANG C C, HSIEH Y T, CHIU P W

Method for laser-assisted lossless transfer of chemical vapor deposition graphene, involves growing gallium nitride and copper layers on sapphire substrate in sequence, depositing graphene on copper layer in chemical vapor deposition mode.

HAO Y, NING J, HAN D, YAN Y, WANG D, ZHANG J, CHAI Z

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C