国家/地区 世界知识产权组织（19）
IPC部 C（19）
IPC大类 C23（19） C01（14） H01（13）
H05（3） B32（2） C25（2）
IPC小类 C23C（19） C01B（14） H01L（11）
H01J（3） B32B（2） H01M（2）
H05H（2）
IPC C23C016/26（19）
发明人 MATSUMOTO T（3） HEE L（2） HYUN L J（2）
IFUKU R（2） IMSUNGWOO（2） JEON Y M（2）
LEE H S（2） LIM H H（2） LIM J（2）
LIM J C（2） LIM S W（2） MALLICK A B（2）
NARKEVICIUTE I（2） PARK J G（2） ROY S S（2）
公开年 2021（9） 2022（8） 2023（2）
申请年 2021（19）
专利权人 TOKYO ELECTR.（5） APPLIED MATE.（3） DAEJOO ELECT.（2） LAM RES CORP（2）

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Porous silicon-based carbon composite used for forming negative electrode active material, comprises silicon particles capable of intercalating and de-intercalating lithium, magnesium compound, and carbon, and has preset molar ratio of magnesium atoms with respect to silicon atoms.

PARK J G, LEE H S, JEON Y M, OH S M, PARK H S, LIM S W, LIM H H, LIM J C, LEE J H, HUNSOO P, IMSUNGWOO, HEE L, LIM J, HYUN L J

Composite material used for improving electroconductivity of metal, has graphene fragment layer that comprises graphene fragments uniformly spread on metal foil layer.

GONG M, SUN B, WANG Y, CHEN Q, YANG W, LI Y, LIANG J, LIU B, ZHANG X, PEI Z