国家/地区 中国（12） 美国（2）
IPC部 C（14）
IPC大类 C23（14）
IPC小类 C23C（14） C01B（2） H01L（2）
IPC C23C016/458（14）
发明人
公开年 2022（14）
申请年 2021（7）  2022（6） 
专利权人 BEIJING GRAP.（2） UNIV PEKING（2）

Mechanism for moving substrate carrier through chemical vapor deposition system, has moveable arm for operating in chamber including first pressure and temperature, and motor located outside chamber in environment including second pressure.

NAVEH D, STERN C, BENNAIM Y, ISMACH A, KAUFMAN T, BARRABI E, MENTOVICH E, ROTEM Y, GRIDISH Y

Growing large size graphene crystal domain at low temperature by plasma enhanced chemical vapor deposition method, comprises putting high-purity copper foil in faraday cage, and placing cage in plasma-enhanced chemical vapor deposition reaction chamber.

ZHEN Z, ZHANG R, XU Z, HE L, LI N

Preparing graphene film, comprises moving growth substrate in reaction chamber at predetermined speed under action of conveying mechanism along with supporting structure until reaction chamber is conveyed out.

GUO B, QU Y, TAN H, SHEN D, WANG W

Composite base system for thin film deposition device, has first base comprising top surface and bottom surface opposite to each other, and radio frequency heating coil coaxially surrounded around second base.

LIU L, ZHENG D, XU C

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Carrier plate structure for preparing single crystal silicon heterojunction solar cell, has graphite frame whose front and back surfaces are provided with coating structure, where coating structure is symmetrically arranged.

YANG M, LIU M

Copper foil coating device useful in technical field of electric material, has rotating pipe whose top end extends to inside of methane concentration detecting box, where bottom end of rotating pipe extends to inside of blower.

Bracket for preparing graphene by chemical vapor deposition method, has locating plate and supporting rod, where locating plate is set with two blocks in parallel, and space for placing growing substrate is formed between two locating plates.

HUANG W, CHEN Q, CAI J, HAO Z

Method for growing graphene wafer, involves depositing and growing graphene wafer on sapphire or metal substrate by vapor deposition, and arranging sheet above metal substrate, and sheet is parallel to plane of metal substrate.

WANG Y, TANG J, YAN R, DU Y

Heating furnace for use in chemical vapor deposition reaction device, has graphite plate supporting wafer substrate, where one side surface used for substrate is provided with growth graphene.

XUE Z, CHEN Z, SHAN J, WANG M, SUN J, LIU Z