国家/地区 中国（10）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10） H01L（4）
IPC C23C016/458（10）
发明人 CHEN J（2） LAI Y（2） WU J（2）
ZHANG L（2）
公开年 2022（6） 2021（4）
申请年 2021（10）
专利权人 PIXELED DISP.（2）

Composite base system for thin film deposition device, has first base comprising top surface and bottom surface opposite to each other, and radio frequency heating coil coaxially surrounded around second base.

LIU L, ZHENG D, XU C

Carrier plate structure for preparing single crystal silicon heterojunction solar cell, has graphite frame whose front and back surfaces are provided with coating structure, where coating structure is symmetrically arranged.

YANG M, LIU M

Graphene metal composite powder growth furnace for scientific research and small scale experiment, has operation control system that starts or closes rotating motor which drives sample chamber to rotate or stop.

MA Y

Preparation method of two-dimensional (2D) nanometer tungsten disulfide semiconductor film, involves placing ceramic boat in central position of high temperature constant temperature zone in tubular furnace respectively.

ZHANG L

Graphene film preparation device useful for heating in pipe, comprises heating element, which is embedded in the quartz tube and forming heating cavity with quartz tube, the heating cavity is placed by substrate, and air supply assembly forming graphene film on the substrate.

QING F, LI X, HE Q

Multi-plane adaptive gas phase deposition device for producing graphene cathode material, has vapor deposition tank whose inner side wall is close to fixedly connected with part of side part spraying port.

QI G, ZHU J, CHI X

Quartz boat structure for chemical vapor deposition device, comprises quartz boat main body having two ends provided with bearing beam, and two sides of upper end of bearing beam provided with rivet inserted in groove.

YE Q, WANG X, ZHANG L

Semiconductor device useful in semiconductor manufacturing technology field for forming functional film layer on surface of substrate using physical and chemical reaction of substance generated in gas phase, comprises tray, thimble and jet device connected with gas source.

LIU J

Semiconductor wafer bearing structure useful in metal organic chemical vapor deposition device, comprises patterned heat conducting part fixed on bearing plate.

LAI Y, WU J, CHEN J

Semiconductor wafer carrying structure used in organic metal chemical vapour deposition device, has protective film layer that covers surface, carrier plate that is arranged on carrier structure, and patterned coating layer that is formed on carrier plate.

LAI Y, WU J, CHEN J