国家/地区 中国（12） 美国（7） 世界知识产权组织（4） 韩国（3） 日本（2） 台湾（2）
IPC部 C（18） H（10） B（2）
IPC大类 C23（18） H01（9） C01（8）
C25（2） H05（2）
IPC小类 C23C（18） H01L（9） C01B（8）
H01J（2）
IPC C23C016/50（18）
发明人 BYUN K（2） CHENG S（2） CHENG Y（2）
KIM C（2） LEE C（2） LEE E（2）
LI C（2） LI Y（2） LIU M（2）
LIU Z（2） QI Y（2） SHIN H（2）
WANG K（2） WANG X（2） YE Q（2）
公开年 2021（10） 2022（8）
申请年 2021（18）
专利权人 APPLIED MATE.（2） BEIJING GRAP.（2） SAMSUNG ELEC.（2） TOKYO ELECTR.（2）
UNIV PEKING（2）

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Carrier plate structure for preparing single crystal silicon heterojunction solar cell, has graphite frame whose front and back surfaces are provided with coating structure, where coating structure is symmetrically arranged.

YANG M, LIU M

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Preparation method of nano liquid absorbing core for intelligent product or electronic product, involves taking metal core and in situ growing graphene with hydrophilic functional groups on surface of the metal core.

JIA Y, WU Q, MA Y

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Method for preparing high infrared element used in aerospace field, involves providing metal material, and graphene coating is obtained by chemical vapor deposition growth on surface of metal material.

YUAN H, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Method for metal protection used in e.g. metal anti-corrosion field in high power wire cable, and high temperature electromagnetic shielding involves providing metal material, and obtaining vertical graphene coating on the surface of metal material by plasma enhanced chemical vapor deposition.

LI J, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X