国家/地区 中国（15）
IPC部 C（15）
IPC大类 C23（15）
IPC小类 C23C（15） C01B（5） H01L（4）
H01B（2）
IPC C23C016/511（15）
发明人 BYUN K（2） BYUN K E（2） LEE C（2）
LEE C S（2） LEE E（2） LI C（2）
LI Y（2） SHEN X（2） SHIN H（2）
SHIN H J（2） SHIN K（2） SHIN K W（2）
SONG H（2） SONG H J（2） WANG B（2）
公开年 2022（4） 2016（2） 2017（2） 2023（2）
申请年 2022（4）  2016（3）  2019（2）  2021（2） 
专利权人 SAMSUNG ELEC.（2）

Microwave plasma chemical vapor deposition device, has metal cavity wall arranged around periphery of reaction cavity, where metal cavity wall is configured for shrinking or expanding around reaction cavity.

XU G, LIU F, WU H, AN K

Microwave power synthesis system useful in microwave plasma chemical vapor deposition reaction system in film deposition field, comprises e.g. power synthesis chamber used for synthesizing microwave fed by microwave feed ports after injection locking frequency and injection adjusting phase.

ZHONG N, HUANG M

Preparing metal/graphene/polycrystalline diamond film particle detector used in field of nuclear physics, comprises depositing layer of graphene on surface of patterned metal substrate as ohmic contact electrode layer and growing diamond film in situ on graphene, where metal substrate is copper foil.

XIONG Y, WANG B

Technology for preparing carbon-based material film based on common action of bias voltage and laser, comprises plasma chemical vapor deposition device based on adding bias and laser control.

ZHU J, WANG S, YANG D, DI M, WANG B

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Method for preparing high infrared element used in aerospace field, involves providing metal material, and graphene coating is obtained by chemical vapor deposition growth on surface of metal material.

YUAN H, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Preparing a silica/graphene nanocomposite by microwave chemical vapor deposition comprises e.g. placing silica in a reaction chamber of a microwave plasma, and introducing shielding gas and heating.

SUN T, SHI H, FENG S, WEI D, ZHAO B

Improving field emission performance of graphene sheet-silicon nanowire array composite material involves preparing silicon nanowire array by using metal catalytic corrosion method, and bombarding silicon nanometer by using silver ion.

DENG J, ZHANG Y, ZHU W