国家/地区 中国（16）
IPC部 C（16）
IPC大类 C01（16）
IPC小类 C01B（16） C23C（16） H01L（5）
B82Y（4） H01J（3） B22F（2）
H01B（2）
IPC C23C016/26（16）
发明人 ZHANG L（2）
公开年 2021（6） 2013（3） 2012（2）
申请年 2020（3）  2021（3）  2012（2）  2013（2） 
专利权人 NINGBO INST .（2）

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L

Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.

XIA Y, ZHUO E, YU S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Preparing graphene/metal composite powder involves heating carbon-containing free radicals obtained by hot filament cracking to react with metal powder in a fluidized bed, lowering temperature to grow graphene on the fluidized metal powder.

DAI D, YANG K, LIN Z, JIANG N, MA H

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Large area graphene preparation device comprises e.g. a mainframe part i.e. mounted on upper part of the main machine part, where one side is connected with the gas inlet, and box furnace is connected to vacuum unit on the other side.

JIN J

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z