国家/地区 中国（5） 美国（4） 韩国（2） 世界知识产权组织（2）
IPC部 C（10） H（5） B（2）
IPC大类 C23（10） C01（6） H01（5）
B82（2）
IPC小类 C23C（10） C01B（6） H01L（4）
B82Y（2） H01J（2）
IPC C23C016/52（10）
发明人 NAGEL C J（2）
公开年 2021（10）
申请年 2020（10）
专利权人 QUANTUM ELEM.（2）

Producing hexagonal boron nitride or graphene two-dimensional composite material, involves obtaining obtaining germanium substrate, depositing hexagonal boron nitride on germanium substrate by controlling area and depositing graphene.

LEE J, HYEON S H, HYEONG S

Performing quantum printing metal within nanoporous carbon powder involves adding nanoporous carbon powder into reactor assembly (RA) comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon powder.

NAGEL C J

Reactor assembly comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon material, first porous frit defining floor of reactor chamber, second porous frit defining ceiling of the reactor chamber.

NAGEL C J, BRODEUR C L

Manufacturing first sheet of first two-dimensional material i.e. graphene, comprises e.g. providing container containing substrate, comprising set of layers having solid layer and volume above substrate and supplying precursor species.

COLOSIMO N G R

Preparing giant magneto-impedance effect graphene/nanocrystalline composite material comprises e.g. placing iron-based amorphous strip in tubular furnace, annealing to obtain iron-based nanocrystalline strips, and placing in quartz boat.

SONG Y, ZHAO Z, SUN Z, CHEN Y

Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.

XIA Y, ZHUO E, YU S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Regulating number of molybdenum disulfide layers in molybdenum disulfide/graphene heterojunction comprises using methane and hydrogen, placing polished copper foil into quartz tube and graphene-transferred silicon dioxide/ substrate.

XU K, ZHOU Y, LI P

Controllable growing of two-dimensional semiconductor film by dissolving excess metal precursor in supercritical carbon dioxide to reach saturation state, introducing supercritical carbon dioxide into nuclear reaction area, and growing film.

XU Q, WANG Q, YIN J, LIU B, WANG Z