国家/地区 中国（6） 波兰（2） 美国（2） 世界知识产权组织（2）
IPC部 C（9）
IPC大类 C30（9） C01（4） C23（3）
B82（2） H01（2）
IPC小类 C30B（9）
IPC C30B025/02（9）
发明人 DENG P（4） GUO H（4） LEI T（4）
ZHANG K（4） ZHANG Y（4） ATRASZKIEWICZ R（2）
DYBOWSKI K（2） KULA P（2） MODRZYK W（2）
PIETRASIK R（2）
公开年 2012（5） 2013（3）
申请年 2012（9）
专利权人 UNIV XIDIAN（5）

Separating graphene film from liquid graphene-forming matrix involves upon completion of heating/adding hydrocarbon mixture, and during cooling, sliding mould frame over surface of liquid forming matrix, and lifting mould frame above matrix.

ATRASZKIEWICZ R, DYBOWSKI K, KLINOWSKI B M, KULA P, MODRZYK W, PIETRASIK R, ZAWISTOWSKI P Z

Method for producing graphene layer, involves fixing liquid metal on solid substrate or ceramic metal, fixing outer layer of liquid metal or alloy metals at melting point, and forming multi-layer in graphene forming die.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, MODRZYK W

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Preparing graphene based on copper film auxiliary annealing, useful for sealing gas and liquid, comprises cleaning silicon substrate, obtaining 3C-silicon carbide heteroepitaxial film, reacting, annealing, reconstructing and removing film.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Forming graphene involves putting cleaned silicon substrate into chemical vapor deposition system reaction chamber, heating, placing specific hetero-epitaxy film, depositing nickel film on the substrate by electronic beam, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y