国家/地区 中国（8） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（12） H（6）
IPC大类 C30（12） H01（6） C01（3）
IPC小类 C30B（12）
IPC C30B025/18（12）
发明人 LIU J（2） YU D（2）
公开年 2021（12）
申请年 2021（12）
专利权人 UNIV PEKING（2）

Method for growing gallium nitride single crystal by high temperature heat treatment assisted two-dimensional coating mask substrate, involves adding polyvinylpyrrolidone to adjust viscosity of nanosheet solution, using spin coater to adsorb substrate, growing single crystals on mask substrates.

LV H, WU Y, HAO X, HU H, SHAO Y, ZHANG B

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Graphene-based reusable zinc oxide single crystal substrate useful for preparing zinc oxide film comprises zinc oxide/graphene substrate including zinc oxide single crystal substrate and at least two layers of graphene.

YE Z, WANG P, PAN X, WANG N

Method for reducing nucleation density of graphene, involves passing gas into quartz tube to normal pressure after vacuuming and turning OFF heating and gas supply of tube furnace and cooling tube furnace to room temperature after growth of graphene is completed.

YUAN L

Single crystal diamond epitaxial growth by iridium-graphene structured buffer layer, comprises preparing layer of iridium-nickel composite patterned transition layer performing vacuum stress relief annealing and chemical vapor deposition.

LI C, XIA T, ZHENG Y, YUAN X, CHEN L, LIU J, WEI J

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D

Preparing silicon nitride single crystal involves providing silicon carbide substrate, and disposing multilayer graphene an insertion layer on silicon carbide substrate to obtain graphene/silicon carbide substrate.

WANG Y, XU Y, WANG J, XU K

Preparing single crystal graphene film comprises e.g. providing substrate, carbon source and container, providing at least one through hole on container, placing substrate in container, and depositing carbon source.

ZOU D, TIAN Z, ZHANG Z, ZHAO Y, YU D